Through-silicon via dies are described. In an example, a semiconductor die includes a substrate having a device side and a backside. An active device layer is in or on the device side of the substrate. A dielectric structure is over the active device layer. A first die-edge metal guard ring is in the dielectric structure and around an outer perimeter of the substrate. A plurality of metallization layers is in the dielectric structure and within the first die-edge metal guard ring. A plurality of through silicon vias is in the substrate and extend into the dielectric structure and are connected to the plurality of metallization layers. A plurality of backside metallization structures is beneath the backside of the substrate. The plurality of through silicon vias are connected to the plurality of backside metallization structures. A second die-edge metal guard ring is laterally around the plurality of backside metallization structures.