Invention Publication
- Patent Title: SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETIZATION ROTATIONAL TYPE MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND MAGNETIZATION ROTATION METHOD
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Application No.: US18771471Application Date: 2024-07-12
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Publication No.: US20240365684A1Publication Date: 2024-10-31
- Inventor: Tomoyuki SASAKI
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP 15232334 2015.11.27 JP 16053072 2016.03.16 JP 16056058 2016.03.18 JP 16210531 2016.10.27 JP 16210533 2016.10.27
- Main IPC: H10N52/00
- IPC: H10N52/00 ; G01R33/09 ; G11B5/39 ; G11C11/16 ; G11C11/18 ; H01F10/32 ; H01L27/105 ; H01L29/82 ; H03B15/00 ; H10B61/00 ; H10N50/10 ; H10N50/80 ; H10N50/85 ; H10N52/01 ; H10N52/80

Abstract:
This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.
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