Invention Application
- Patent Title: TRANSISTOR CONTACTS AND METHODS OF FORMING THE SAME
-
Application No.: US18790792Application Date: 2024-07-31
-
Publication No.: US20240395871A1Publication Date: 2024-11-28
- Inventor: Wei-Ting Chien , Wen-Yen Chen , Li-Ting Wang , Su-Hao Liu , Liang-Yin Chen , Huicheng Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/06 ; H01L29/08 ; H01L29/66
Abstract:
In an embodiment, a device includes: a gate structure on a channel region of a substrate; a gate mask on the gate structure, the gate mask including a first dielectric material and an impurity, a concentration of the impurity in the gate mask decreasing in a direction extending from an upper region of the gate mask to a lower region of the gate mask; a gate spacer on sidewalls of the gate mask and the gate structure, the gate spacer including the first dielectric material and the impurity, a concentration of the impurity in the gate spacer decreasing in a direction extending from an upper region of the gate spacer to a lower region of the gate spacer; and a source/drain region adjoining the gate spacer and the channel region.
Information query
IPC分类:
