Invention Application
- Patent Title: MULTI-LAYER FILM DEVICE AND METHOD
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Application No.: US18790280Application Date: 2024-07-31
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Publication No.: US20240395939A1Publication Date: 2024-11-28
- Inventor: Yao-Jen Chang , Chih-Chien Chi , Chen-Yuan Kao , Hung-Wen Su , Kai-Shiang Kuo , Po-Cheng Shih , Jun-Yi Ruan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/768 ; H01L21/8238 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L27/092 ; H01L29/66

Abstract:
A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.
Information query
IPC分类: