Invention Application
- Patent Title: LIGHT-EMITTERS WITH GROUP III-NITRIDE-BASED QUANTUM WELL ACTIVE REGIONS HAVING GAN INTERLAYERS
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Application No.: US18322861Application Date: 2023-05-24
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Publication No.: US20240395966A1Publication Date: 2024-11-28
- Inventor: Guangying Wang , Shubhra Pasayat , Chirag Gupta
- Applicant: Wisconsin Alumni Research Foundation
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Main IPC: H01L33/02
- IPC: H01L33/02 ; H01L33/00 ; H01L33/06 ; H01L33/32 ; H01S5/343
Abstract:
Group III-nitride-based light-emitting devices are provided. The light-emitting devices are characterized by an active region having one or more quantum wells. The one or more quantum wells having a double well design provided by a first well layer comprising an AlInGaN alloy or an InGaN alloy and an adjacent GaN interlayer, both of which are disposed between two barrier layers comprising an AlGaN alloy or a low-In-content AlInGaN alloy.
Information query
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