公开(公告)号：US20240395966A1

公开(公告)日：2024-11-28

申请号：US18322861

申请日：2023-05-24

Applicant: Wisconsin Alumni Research Foundation

Inventor： Guangying Wang ,  Shubhra Pasayat ,  Chirag Gupta

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/343

Abstract: Group III-nitride-based light-emitting devices are provided. The light-emitting devices are characterized by an active region having one or more quantum wells. The one or more quantum wells having a double well design provided by a first well layer comprising an AlInGaN alloy or an InGaN alloy and an adjacent GaN interlayer, both of which are disposed between two barrier layers comprising an AlGaN alloy or a low-In-content AlInGaN alloy.