Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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Application No.: US18811754Application Date: 2024-08-21
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Publication No.: US20240415026A1Publication Date: 2024-12-12
- Inventor: Hui-Lin Wang , Chia-Chang Hsu , Chen-Yi Weng , Chin-Yang Hsieh , Jing-Yin Jhang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN201811267036.0 20181029
- Main IPC: H10N50/80
- IPC: H10N50/80 ; G11C11/16 ; H01F10/32 ; H01F41/34 ; H10B61/00 ; H10N50/01 ; H10N50/85
Abstract:
A semiconductor device includes a substrate comprising a MTJ region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a metal interconnection on the logic region. Preferably, the MTJ includes a bottom electrode layer having a gradient concentration, a free layer on the bottom electrode layer, and a top electrode layer on the free layer.
Information query
