Invention Application
- Patent Title: SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSINGSYSTEM
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Application No.: US18686532Application Date: 2022-08-17
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Publication No.: US20250125162A1Publication Date: 2025-04-17
- Inventor: Takashi UNO , Naoyuki OKAMURA , Katsufumi MATSUKI
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2021-138891 20210827
- International Application: PCT/JP2022/031022 WO 20220817
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/304 ; H01L21/306 ; H01L21/687
Abstract:
A substrate processing method of processing a substrate includes grinding a surface of the substrate; etching the surface of the substrate by supplying an etching liquid to the surface of the substrate after being ground; and removing a metal adhering to the surface of the substrate by supplying a cleaning liquid to the surface of the substrate after being etched. Further, a substrate processing system of processing the substrate includes a grinding device configured to grind the surface of the substrate; an etching liquid supply configured to etch the surface of the substrate by supplying the etching liquid to the surface of the substrate after being ground; and a cleaning liquid supply configured to remove the metal adhering to the surface of the substrate by supplying the cleaning liquid to the surface of the substrate after being etched.
Information query
IPC分类:
