公开(公告)号：US20220130689A1

公开(公告)日：2022-04-28

申请号：US17425046

申请日：2020-01-15

Applicant: Tokyo Electron Limited

Inventor： Takashi UNO ,  Satoshi OKAWA

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate having thereon a device layer and a second substrate are bonded to each other includes a holder configured to hold a rear surface of the second substrate; a processing unit configured to process the first substrate held by the holder; a first processing liquid supply configured to etch a front surface of the first substrate by supplying a first processing liquid to the front surface of the first substrate opposite to a surface thereof where the device layer is provided; and a second processing liquid supply configured to remove a metal contaminant on the rear surface of the second substrate by supplying a second processing liquid to the rear surface of the second substrate.

公开(公告)号：US20150328668A1

公开(公告)日：2015-11-19

申请号：US14713275

申请日：2015-05-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya KOYAMA ,  Hiromi KIYOSE ,  Katsufumi MATSUKI ,  Shuhei TAKAHASHI ,  Hideki NISHIMURA ,  Takashi UNO ,  Hirotaka MARUYAMA

IPC: B08B9/032 ,  H01L21/67

CPC classification number: H01L21/67017 ,  B08B9/032 ,  H01L21/67023

Abstract: A substrate liquid treatment apparatus includes: at least one processing unit that processes a substrate with a treatment liquid; a storage tank that stores the treatment liquid; a circulation line through which the treatment liquid discharged from the storage tank into the circulation line is returned to the storage tank; a branch supply line that is branched from the circulation line to supply the treatment liquid to the processing unit; a recovery line that returns to the storage tank the treatment liquid having been supplied to the substrate in the processing unit; a distribution line connecting the circulation line and the recovery line; and a shutoff valve, provided on the distribution line, that is opened when cleaning of the recovery line is performed.

Abstract translation: 基板液体处理装置包括：至少一个处理单元，其用处理液处理基板; 存储处理液的储罐; 从储罐排入循环管线的处理液通过该循环管线返回到储罐; 分支供应管线，其从所述循环管线分支以将处理液体供应到所述处理单元; 回收管线，其将处理单元中已经供给到所述基板的处理液体返回到所述储存罐; 连接循环管线和回收管线的分配管线; 以及设置在分配线上的截止阀，其在清洁回收管线时被打开。

公开(公告)号：US20230352328A1

公开(公告)日：2023-11-02

申请号：US18220269

申请日：2023-07-11

Applicant: Tokyo Electron Limited

Inventor： Yoshinori IKEDA ,  Shota UMEZAKI ,  Shigeru MORIYAMA ,  Ryo YAMAMOTO ,  Takashi UNO

IPC: H01L21/673 ,  B08B3/10 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/67393 ,  B08B3/10 ,  H01L21/02057 ,  H01L21/67028

Abstract: A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit (31) which is rotatable, a step of arranging a top plate portion (41) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion (41) to wash the substrate and the top plate portion (41) with the rinsing liquid (Lr).

公开(公告)号：US20250029950A1

公开(公告)日：2025-01-23

申请号：US18778186

申请日：2024-07-19

Applicant: Tokyo Electron Limited

Inventor： Yuji MIMURA ,  Takashi UNO ,  Takahiro NODA ,  Satoshi MICHINAKA

IPC: H01L23/00

Abstract: A bonding method includes: preparing a first semiconductor substrate having a first surface and a second semiconductor substrate having a second surface; hydrophilizing the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate; bonding the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate after the hydrophilizing; and bonding the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate after the hydrophilizing. The enhancing of the bonding strength includes performing heat treatment on the first semiconductor substrate and the second semiconductor substrate in a first temperature range; and performing heat treatment on the first semiconductor substrate and the second semiconductor substrate at a target temperature after the performing of the heat treatment in the first temperature range. The first temperature range is lower than the target temperature.

公开(公告)号：US20210313209A1

公开(公告)日：2021-10-07

申请号：US17267503

申请日：2019-07-26

Applicant: Tokyo Electron Limited

Inventor： Yoshinori IKEDA ,  Shota UMEZAKI ,  Shigeru MORIYAMA ,  Ryo YAMAMOTO ,  Takashi UNO

IPC: H01L21/673 ,  H01L21/02 ,  B08B3/10

Abstract: A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit (31) which is rotatable, a step of arranging a top plate portion (41) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion (41) to wash the substrate and the top plate portion (41) with the rinsing liquid (Lr).

公开(公告)号：US20250125162A1

公开(公告)日：2025-04-17

申请号：US18686532

申请日：2022-08-17

Applicant: Tokyo Electron Limited

Inventor： Takashi UNO ,  Naoyuki OKAMURA ,  Katsufumi MATSUKI

IPC: H01L21/67 ,  H01L21/304 ,  H01L21/306 ,  H01L21/687

Abstract: A substrate processing method of processing a substrate includes grinding a surface of the substrate; etching the surface of the substrate by supplying an etching liquid to the surface of the substrate after being ground; and removing a metal adhering to the surface of the substrate by supplying a cleaning liquid to the surface of the substrate after being etched. Further, a substrate processing system of processing the substrate includes a grinding device configured to grind the surface of the substrate; an etching liquid supply configured to etch the surface of the substrate by supplying the etching liquid to the surface of the substrate after being ground; and a cleaning liquid supply configured to remove the metal adhering to the surface of the substrate by supplying the cleaning liquid to the surface of the substrate after being etched.

公开(公告)号：US20240355647A1

公开(公告)日：2024-10-24

申请号：US18686540

申请日：2022-08-05

Applicant: Tokyo Electron Limited

Inventor： Takashi UNO ,  Naoyuki OKAMURA ,  Katsufumi MATSUKI ,  Keisuke SAKAGUCHI

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/311 ,  H01L21/687

CPC classification number: H01L21/67063 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/68764

Abstract: A substrate processing method of processing a substrate includes etching a surface of the substrate by supplying an etching liquid containing hydrofluoric acid and phosphoric acid to the surface of the substrate; collecting the etching liquid after being used in the etching; measuring a thickness distribution of the substrate after being etched; and adjusting a composition ratio of the etching liquid by adding, based on the measured thickness distribution, at least hydrofluoric acid or phosphoric acid to the etching liquid collected after being used in the etching.

公开(公告)号：US20240290607A1

公开(公告)日：2024-08-29

申请号：US18573700

申请日：2022-04-08

Applicant: Tokyo Electron Limited

Inventor： Takashi UNO ,  Satoshi OKAWA ,  Naoyuki OKAMURA ,  Katsufumi MATSUKI

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02019 ,  H01L21/6708

Abstract: A substrate processing method of processing a substrate includes etching a first surface of the substrate by supplying an etching liquid containing at least hydrofluoric acid and nitric acid onto the first surface. The etching of the first surface includes determining a scan width as a distance between return points set at both ends of a reciprocating movement, and a scan speed at which an etching liquid supply is reciprocated such that a first time taken for the etching liquid supply that has passed a rotation center to pass the rotation center again after turning around at the end of the reciprocating movement becomes shorter than a second time taken for the etching liquid supplied to the rotation center to be removed to an outer peripheral portion of the substrate by a centrifugal force; and etching the first surface with the determined scan width and the determined scan speed.

公开(公告)号：US20240282603A1

公开(公告)日：2024-08-22

申请号：US18413497

申请日：2024-01-16

Applicant: Tokyo Electron Limited

Inventor： Hiroshi MARUMOTO ,  Takashi UNO

IPC: H01L21/67

CPC classification number: H01L21/6715 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/67253

Abstract: A flow rate estimating method includes a supply process, an image process, and an estimate process. The supply process supplies processing liquid from a processing-liquid supplying unit to a position that is apart from the center of the substrate while rotating the substrate utilizing a substrate holding unit that rotatably holds the substrate. The image process images a liquid film formed by diffusion of the processing liquid on the surface of the substrate utilizing an imaging unit. The estimate process calculates a characteristic amount that indicates a state of the diffusion of the processing liquid from an imaging result of the imaging unit, and estimates the flow rate by applying the calculated characteristic amount to a correlation function that indicates the correlation between the characteristic amount and the flow rate of the processing liquid supplied to the substrate from the processing-liquid supplying unit.

公开(公告)号：US20210296119A1

公开(公告)日：2021-09-23

申请号：US17259244

申请日：2019-07-18

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Takashi UNO ,  Satoshi OOKAWA ,  Suguru ENOKIDA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H01L21/762 ,  B23K26/26

Abstract: A substrate processing system configured to process a substrate includes a first modifying apparatus configured to form, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, an internal modification layer elongated within the first substrate in a plane direction from a center of the first substrate toward at least an edge portion of the first substrate as a removing target; a second modifying apparatus configured to form, within the first substrate, an edge modification layer elongated in a thickness direction of the first substrate along a boundary between the edge portion and a central portion of the first substrate; and a separating apparatus configured to separate a portion of the first substrate at a rear surface side, starting from the internal modification layer.