发明授权
US3575823A Method of making a silicon target for image storage tube 失效
制造图像存储管的硅靶的方法

Method of making a silicon target for image storage tube
摘要:
THE SPECIFICATION DESCRIBES A TECHNIQUE FOR IMPROVING THE DIODE-ARRAY IMGAGE STORAGE TUBE DESCRIBED IN APPLICATION SER. NO. 605,715 AND NOW PAT. NO. 3,403,284. CONDUCTIVE ISLAND ARE DEPOSITED EACH DIODE TO MINIMIZE ADVERSE CHARGE STORAGE EFFECTS ON THE INSULATOR ISOLATING THE DIODES. PRECIDE REGISTRATION OF THE ISLAND ON THE DIODE REGIONS IS OBTAINED BY SELECTIVE PREFERRENTIAL DEPOSITION ON THE REALTIVELY CONDUCTIVE DIODE REGIONS. THIS CAN BE DONE BY ELECTRODEPOSITON OR ELECTROLESS PLATING.
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