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US3619282A Method for vapor growing ternary compounds 失效
蒸气加速三元化合物的方法

Method for vapor growing ternary compounds
Abstract:
Ternary epitaxial films are grown from a gaseous mixture consisting of mercury, cadmium, and tellurium mixed with an inert or unreactive gas such as hydrogen. The mixture is heated to a temperature to prevent binary combinations and then rapidly cooled to the point of supersaturation by flowing the mixture through a thermal gradient having equithermal lines substantially parallel to the growth surface of a substrate.
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