Invention Grant
- Patent Title: Method for vapor growing ternary compounds
- Patent Title (中): 蒸气加速三元化合物的方法
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Application No.: US3619282DApplication Date: 1968-09-27
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Publication No.: US3619282APublication Date: 1971-11-09
- Inventor: MANLEY GERALD W , MCDERMOTT PHILIP S , PAN EDWARD S , RILEY RALPH J
- Applicant: IBM
- Assignee: Ibm
- Current Assignee: Ibm
- Priority: US76314768 1968-09-27
- Main IPC: C01G11/00
- IPC: C01G11/00 ; C30B23/02 ; C30B25/00 ; C30B25/02 ; C30B29/48 ; G03B21/64 ; H01L21/365 ; H01L7/36 ; C23C13/04
Abstract:
Ternary epitaxial films are grown from a gaseous mixture consisting of mercury, cadmium, and tellurium mixed with an inert or unreactive gas such as hydrogen. The mixture is heated to a temperature to prevent binary combinations and then rapidly cooled to the point of supersaturation by flowing the mixture through a thermal gradient having equithermal lines substantially parallel to the growth surface of a substrate.
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