公开(公告)号：US3619282A

公开(公告)日：1971-11-09

申请号：US3619282D

申请日：1968-09-27

Applicant: IBM

Inventor： MANLEY GERALD W ,  MCDERMOTT PHILIP S ,  PAN EDWARD S ,  RILEY RALPH J

IPC: C01G11/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B29/48 ,  G03B21/64 ,  H01L21/365 ,  H01L7/36 ,  C23C13/04

CPC classification number: C30B25/00 ,  C30B23/02 ,  G03B21/64 ,  Y10S148/064

Abstract: Ternary epitaxial films are grown from a gaseous mixture consisting of mercury, cadmium, and tellurium mixed with an inert or unreactive gas such as hydrogen. The mixture is heated to a temperature to prevent binary combinations and then rapidly cooled to the point of supersaturation by flowing the mixture through a thermal gradient having equithermal lines substantially parallel to the growth surface of a substrate.

公开(公告)号：US3619283A

公开(公告)日：1971-11-09

申请号：US3619283D

申请日：1968-09-27

Applicant: IBM

Inventor： CARPENTER DONALD R ,  MANLEY GERALD W ,  MCDERMOTT PHILIP S ,  RILEY RALPH J

IPC: C30B23/02 ,  C23C14/06 ,  C30B25/02 ,  C30B29/48 ,  H01L21/365 ,  C23C13/08 ,  B05C11/14 ,  C23C13/00

CPC classification number: C23C14/0629 ,  Y10S117/907 ,  Y10S148/017 ,  Y10S148/064 ,  Y10S252/951 ,  Y10S438/935 ,  Y10S438/971

Abstract: A monocrystalline material of the formulation Hg(1 x)Cd(x)Te is grown epitaxially on a seed or substrate monocrystal of Cd Te, or the like. The reactants are mixed in the vapor phase and held at a temperature which prevents binary combinations. The ternary vapor phase mixture is then rapidly cooled to supersaturation and condensed on the seed crystal substrate. In a dynamic system, the mercury vapor acts as a carrier gas as well as a reactant.

公开(公告)号：US3392066A

公开(公告)日：1968-07-09

申请号：US33256363

申请日：1963-12-23

Applicant: IBM

Inventor： MCDERMOTT PHILIP S ,  MANLEY GERALD W ,  RILEY RALPH J ,  YETTER LAWRENCE R

IPC: H01S5/30 ,  H01S5/32

CPC classification number: H01S5/30 ,  H01S5/32 ,  Y10S148/017 ,  Y10S148/049 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S257/912