公开(公告)号：US3619282A

公开(公告)日：1971-11-09

申请号：US3619282D

申请日：1968-09-27

Applicant: IBM

Inventor： MANLEY GERALD W ,  MCDERMOTT PHILIP S ,  PAN EDWARD S ,  RILEY RALPH J

IPC: C01G11/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B29/48 ,  G03B21/64 ,  H01L21/365 ,  H01L7/36 ,  C23C13/04

CPC classification number: C30B25/00 ,  C30B23/02 ,  G03B21/64 ,  Y10S148/064

Abstract: Ternary epitaxial films are grown from a gaseous mixture consisting of mercury, cadmium, and tellurium mixed with an inert or unreactive gas such as hydrogen. The mixture is heated to a temperature to prevent binary combinations and then rapidly cooled to the point of supersaturation by flowing the mixture through a thermal gradient having equithermal lines substantially parallel to the growth surface of a substrate.

公开(公告)号：US3392066A

公开(公告)日：1968-07-09

申请号：US33256363

申请日：1963-12-23

Applicant: IBM

Inventor： MCDERMOTT PHILIP S ,  MANLEY GERALD W ,  RILEY RALPH J ,  YETTER LAWRENCE R

IPC: H01S5/30 ,  H01S5/32

CPC classification number: H01S5/30 ,  H01S5/32 ,  Y10S148/017 ,  Y10S148/049 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S257/912

公开(公告)号：US3642529A

公开(公告)日：1972-02-15

申请号：US3642529D

申请日：1969-11-17

Applicant: IBM

Inventor： LEE ROBERT E ,  MCDERMOTT PHILIP S ,  PAN EDWARD S

IPC: H01L21/363 ,  H01L31/18 ,  H01L7/36

CPC classification number: H01L31/1832 ,  H01L21/0242 ,  H01L21/02562 ,  Y10S148/063 ,  Y10S148/064 ,  Y10S148/122 ,  Y10S148/15

Abstract: An infrared sensitive photoconductive material is produced by growing a ternary compound of the formulation Hg(1 x) Cdx Te from a gaseous mixture of mercury, cadmium and tellurium onto a substrate which promotes polycrystalline growth and is chemically inert vis-a-vis the constituent gases. Suitable substrate materials are quartz, sapphire, and certain types of glass which are nonmeltable at growth temperatures of the ternary compound. The method preferably grows the polycrystalline material from a gaseous mixture of mercury, cadmium and tellurium heated to a temperature which inhibits binary combinations and then is rapidly cooled to supersaturation very close to the surface of a solid amorphous substrate material although crystalline substrates may be used provided the lattice structure in growth is incompatible with the lattice of the ternary compound.

Abstract translation: 通过将Hg（1-x）Cdx Te制剂的三元化合物从汞，镉和碲的气体混合物生长到促进多晶生长的基底上，并且相对于 组成气体 合适的基底材料是在三元化合物的生长温度下不可熔的石英，蓝宝石和某些类型的玻璃。 该方法优选地从加热到抑制二元组合的温度的汞，镉和碲的气体混合物生长多晶材料，然后迅速冷却至非常接近固体非晶衬底材料的表面的过饱和，尽管可以使用晶体衬底 生长中的晶格结构与三元化合物的晶格不相容。

公开(公告)号：US3619283A

公开(公告)日：1971-11-09

申请号：US3619283D

申请日：1968-09-27

Applicant: IBM

Inventor： CARPENTER DONALD R ,  MANLEY GERALD W ,  MCDERMOTT PHILIP S ,  RILEY RALPH J

IPC: C30B23/02 ,  C23C14/06 ,  C30B25/02 ,  C30B29/48 ,  H01L21/365 ,  C23C13/08 ,  B05C11/14 ,  C23C13/00

CPC classification number: C23C14/0629 ,  Y10S117/907 ,  Y10S148/017 ,  Y10S148/064 ,  Y10S252/951 ,  Y10S438/935 ,  Y10S438/971

Abstract: A monocrystalline material of the formulation Hg(1 x)Cd(x)Te is grown epitaxially on a seed or substrate monocrystal of Cd Te, or the like. The reactants are mixed in the vapor phase and held at a temperature which prevents binary combinations. The ternary vapor phase mixture is then rapidly cooled to supersaturation and condensed on the seed crystal substrate. In a dynamic system, the mercury vapor acts as a carrier gas as well as a reactant.