Method of producing thin film transistors

Invention Grant

US3669661A Method of producing thin film transistors 失效

Title translation: 生产薄膜晶体管的方法

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Patent Title: Method of producing thin film transistors
Patent Title (中): 生产薄膜晶体管的方法
Application No.: US3669661D

Application Date: 1970-03-06
Publication No.: US3669661A

Publication Date: 1972-06-13
Inventor: PAGE DERRICK J , DRIVER MICHAEL C
Applicant: WESTINGHOUSE ELECTRIC CORP
Assignee: Westinghouse Electric Corp
Current Assignee: Westinghouse Electric Corp
Priority: US1719770 1970-03-06
Main IPC: H01L21/203
IPC: H01L21/203 ; H01L29/00 ; G03C5/00

Method of producing thin film transistors

Abstract:

THIS DISCLOSURE IS CONCERNED WITH A METHOD OF PRODUCING A THIN FILM TRANSITOR ON A SUBSTRATE BY EVAPORATING LAYERS OF VARIOUS MATERIALS FROM SOURCES POSITIONED AT VARIOUS ANGLES TO THE SUBSTRATE NORMAL.

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/20	....半导体材料在基片上的沉积，例如外延生长
H01L21/203	.....应用物理沉积的，例如真空沉积，溅射