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    Thin film power fet
    3.
    发明授权
    Thin film power fet 失效
    薄膜电源FET

    公开(公告)号：US3652907A

    公开(公告)日：1972-03-28

    申请号：US3652907D

    申请日：1970-05-05

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： PAGE DERRICK J ,  BRODY THOMAS P

    IPC: H01L29/00 ,  H01L29/76 ,  H01L11/14

    CPC classification number: H01L29/00 ,  H01L29/76

    Abstract: This disclosure is concerned with a thin film, power field effect transistor having a power dissipation capability of 80 watts/cm.2. The transistor has a thin film interdigitated source and drain used in conjunction with a thick film source and drain leads. The thick film source and drain leads essentially eliminates negative feedback resulting from a voltage drop in the source and drain.

    Abstract translation: 本公开涉及具有80瓦/ cm 2的功率消耗能力的薄膜功率场效应晶体管。 晶体管具有与厚膜源极和漏极引线结合使用的薄膜交叉的源极和漏极。 厚膜源极和漏极引线基本上消除了源极和漏极中的电压降引起的负反馈。

    Light activated thyristor with high di/dt capability
    5.
    发明授权
    Light activated thyristor with high di/dt capability 失效
    具有高di / dt能力的光激活晶闸管

    公开(公告)号：US3893153A

    公开(公告)日：1975-07-01

    申请号：US43237474

    申请日：1974-01-10

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： PAGE DERRICK J ,  ROBERTS JOHN S

    IPC: H01L31/111 ,  H01L9/12

    CPC classification number: H01L31/1113

    Abstract: A light activated thyristor with high dI/dt capability is provided by disposing first and second thyristors, one a primary and one a pilot thyristor, in a semiconductor body having first and second major surfaces. The two thristors have common cathodebase, anode-base and anode-emitter regions, and have spaced apart cathode-emitter regions adjoining the first major surface of the body. The common cathode-base region adjoins the first major surface between the two thyristors as well as intermittently of the cathode-emitter region of the first thyristor to form shunts. The first major surface at the cathode-emitter region of the second thyristor is adapted for activation of the second thyristor therethrough with electromagnetic radiation of wavelengths corresponding substantially to the energy bandgap of the semiconductor body. The cathode electrode makes ohmic contact with the cathode-emitter region of the first thyristor and the common cathode-base region at the shunts, and the anode electrode makes ohmic contact with the common anode-emitter regions. A floating contact also makes ohmic contact to the cathode-emitter region of the second thyristor and the common cathode-base region between the thyristors, while leaving exposed substantial portions of the first major surface adjoining the cathode-emitter region of the second thyristor.

    Abstract translation: 具有高dI / dt能力的光激活晶闸管通过在具有第一和第二主表面的半导体本体中布置第一和第二晶闸管（一个一个和一个导频晶闸管）来提供。 这两个支架具有共同的阴极基极，阳极基极和阳极 - 发射极区域，并且具有与主体的第一主表面相邻的间隔开的阴极 - 发射极区域。 公共阴极基区域与两个晶闸管之间的第一主表面相邻，以及间歇地连接第一晶闸管的阴极 - 发射极区域以形成分路。 第二晶闸管的阴极 - 发射极区域处的第一主表面适于通过其基本上对应于半导体本体的能带隙的波长的电磁辐射激活第二晶闸管。 阴极与分流器的第一晶闸管和公共阴极 - 基极区域的阴极 - 发射极区域欧姆接触，并且阳极电极与公共阳极 - 发射极区域欧姆接触。 浮动接触还使第二晶闸管的阴极 - 发射极区域和晶闸管之间的公共阴极 - 基极区域欧姆接触，同时使第一主表面的暴露的大部分与第二晶闸管的阴极 - 发射极区域邻接。

    Mask changing mechanism for use in the evaporation of thin film devices
    6.
    发明授权
    Mask changing mechanism for use in the evaporation of thin film devices 失效
    用于薄膜装置蒸发的掩模改变机制

    公开(公告)号：US3669060A

    公开(公告)日：1972-06-13

    申请号：US3669060D

    申请日：1970-09-24

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： PAGE DERRICK J ,  RAYGOR PAUL O

    IPC: C23C14/04 ,  H01L21/67 ,  C23C13/12

    CPC classification number: H01L21/67 ,  C23C14/042

    Abstract: Apparatus for changing a mask used in the evaporation of thin film electronic components formed on flexible substrates by vapor deposition techniques, whereby a number of masks are successively brought into registration with a substrate for sequentially depositing a series of thin films of selected materials including semiconducting, insulating, or conducting materials through the mask onto the substrate. The apparatus is particularly concerned with alignment pins for enabling registration of successive patterns to be vacuum evaporated successively onto one area of a flexible substrate tape with an accuracy of + OR - 1 Mu . The area of the substrate tape may be changed and the process repeated time after time without opening the vacuum system.

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