Abstract:
This disclosure is concerned with thin film field effect transistor (FET) formed on flexible metal substrates by vapor deposition techniques. The FET is electrically insulated from the metal substrate by an electrically insulating varnish.
Abstract:
THIS DISCLOSURE IS CONCERNED WITH A METHOD OF PRODUCING A THIN FILM TRANSITOR ON A SUBSTRATE BY EVAPORATING LAYERS OF VARIOUS MATERIALS FROM SOURCES POSITIONED AT VARIOUS ANGLES TO THE SUBSTRATE NORMAL.
Abstract:
This disclosure is concerned with a thin film, power field effect transistor having a power dissipation capability of 80 watts/cm.2. The transistor has a thin film interdigitated source and drain used in conjunction with a thick film source and drain leads. The thick film source and drain leads essentially eliminates negative feedback resulting from a voltage drop in the source and drain.
Abstract translation:本公开涉及具有80瓦/ cm 2的功率消耗能力的薄膜功率场效应晶体管。 晶体管具有与厚膜源极和漏极引线结合使用的薄膜交叉的源极和漏极。 厚膜源极和漏极引线基本上消除了源极和漏极中的电压降引起的负反馈。
Abstract:
A light activated thyristor with high dI/dt capability is provided by disposing first and second thyristors, one a primary and one a pilot thyristor, in a semiconductor body having first and second major surfaces. The two thristors have common cathodebase, anode-base and anode-emitter regions, and have spaced apart cathode-emitter regions adjoining the first major surface of the body. The common cathode-base region adjoins the first major surface between the two thyristors as well as intermittently of the cathode-emitter region of the first thyristor to form shunts. The first major surface at the cathode-emitter region of the second thyristor is adapted for activation of the second thyristor therethrough with electromagnetic radiation of wavelengths corresponding substantially to the energy bandgap of the semiconductor body. The cathode electrode makes ohmic contact with the cathode-emitter region of the first thyristor and the common cathode-base region at the shunts, and the anode electrode makes ohmic contact with the common anode-emitter regions. A floating contact also makes ohmic contact to the cathode-emitter region of the second thyristor and the common cathode-base region between the thyristors, while leaving exposed substantial portions of the first major surface adjoining the cathode-emitter region of the second thyristor.
Abstract:
Apparatus for changing a mask used in the evaporation of thin film electronic components formed on flexible substrates by vapor deposition techniques, whereby a number of masks are successively brought into registration with a substrate for sequentially depositing a series of thin films of selected materials including semiconducting, insulating, or conducting materials through the mask onto the substrate. The apparatus is particularly concerned with alignment pins for enabling registration of successive patterns to be vacuum evaporated successively onto one area of a flexible substrate tape with an accuracy of + OR - 1 Mu . The area of the substrate tape may be changed and the process repeated time after time without opening the vacuum system.
Abstract:
This disclosure relates to a Schottky barrier semiconductor device in which the anode contact is surrounded by a tapered layer of a high resistivity, high work function material.