A metal solvent is melted and a semiconductor material is added to the molten metal solvent when the metal solvent is at approximately the temperature at which the deposition is to start. When the semiconductor material is in the metal solvent long enough to allow enough of the semiconductor material to dissolve in the metal solvent to exactly saturate the metal solvent with the semiconductor material the substrate is brought into the solution. Other materials, such as conductivity modifiers and composition modifiers, may be added to each of the solutions either with the semiconductor material or during the deposition process. Apparatus comprises a boat having a plurality of spaced wells in its upper surface. A first slide for bringing a substrate into contact with molten material in the boat forms the floor of the boat wells. A second slide for adding materials (e.g. semiconductors and dopants) to molten material is spaced from the floor adjacent to but slightly below the top surface of the boat.