公开(公告)号：US3897281A

公开(公告)日：1975-07-29

申请号：US22475872

申请日：1972-02-09

Applicant: RCA CORP

Inventor： GILBERT STEPHEN LEE ,  ETTENBERG MICHAEL

IPC: C30B19/04 ,  C30B19/06 ,  C30B19/10 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/106 ,  C30B19/063 ,  Y10S252/95

Abstract: A metal solvent is melted and a semiconductor material is added to the molten metal solvent when the metal solvent is at approximately the temperature at which the deposition is to start. When the semiconductor material is in the metal solvent long enough to allow enough of the semiconductor material to dissolve in the metal solvent to exactly saturate the metal solvent with the semiconductor material the substrate is brought into the solution. Other materials, such as conductivity modifiers and composition modifiers, may be added to each of the solutions either with the semiconductor material or during the deposition process. Apparatus comprises a boat having a plurality of spaced wells in its upper surface. A first slide for bringing a substrate into contact with molten material in the boat forms the floor of the boat wells. A second slide for adding materials (e.g. semiconductors and dopants) to molten material is spaced from the floor adjacent to but slightly below the top surface of the boat.

Abstract translation: 当金属溶剂处于大约开始沉积的温度时，熔融金属溶剂并向熔融金属溶剂中加入半导体材料。 当半导体材料在金属溶剂中足够长以允许足够的半导体材料溶解在金属溶剂中以使半导体材料精确地使金属溶剂饱和时，将衬底引入溶液中。 可以使用半导体材料或在沉积工艺期间将其它材料（例如电导率改性剂和组合物改性剂）加入每种溶液中。

公开(公告)号：US3862859A

公开(公告)日：1975-01-28

申请号：US37654573

申请日：1973-07-05

Applicant: RCA CORP

Inventor： ETTENBERG MICHAEL ,  GILBERT STEPHEN LEE

IPC: H01L21/00 ,  H01L21/205 ,  B44D1/16 ,  H01L7/36 ,  H01L7/38

CPC classification number: H01L21/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02549 ,  H01L21/0262 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/15 ,  Y10S438/938

Abstract: A semiconductor device including a substrate, a first body of a semiconductor material epitaxially deposted on the surface of the substrate and a second body of a semiconductor material epitaxially deposited on the first body. The first body is deposited so as to include a plurality of superimposed epitaxial layers having growth interfaces between adjacent layers so that each of the layers has fewer crystal dislocations than the adjacent layer which is closer to the substrate and the layer adjacent the second body has the fewest crystal dislocations. The second body is of a semiconductor material which has a crystal lattice which substantially matches the crystal lattice of the semiconductor material of the first body.

Abstract translation: 一种半导体器件，包括衬底，外延地保留在衬底的表面上的半导体材料的第一主体和外延地沉积在第一主体上的半导体材料的第二主体。 第一体被沉积成包括多个叠加的外延层，其在相邻层之间具有生长界面，使得每个层具有比邻近于衬底的相邻层更少的晶体位错，并且与第二主体相邻的层具有 最少的晶体位错。 第二主体是具有与第一主体的半导体材料的晶格基本匹配的晶格的半导体材料。