发明授权
- 专利标题： Method of making a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US468876申请日： 1974-05-10
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公开(公告)号： US3940288A公开(公告)日： 1976-02-24
- 发明人: Mikio Takagi , Hajime Kamioka , Kazufumi Nakayama , Haruo Shimoda
- 申请人： Mikio Takagi , Hajime Kamioka , Kazufumi Nakayama , Haruo Shimoda
- 申请人地址： JA Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JA Kawasaki
- 优先权： JA48-54434 19730516; JA48-58404 19730524
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/033 ; H01L21/225 ; H01L23/485 ; H01L29/00 ; H01L21/265
摘要：
A method of making a semiconductor device capable of high-speed operation is disclosed in which when the current gain-bandwidth is increased by the formation of a shallow base region. A side etching process is used to decrease the base spreading resistance and to allow ease in the formation of an emitter region of fine pattern. When the emitter region is formed by using polycrystalline silicon as a source of impurity diffusion, that area of an insulating film on a semiconductor substrate which adjoins the polycrystalline silicon is removed before the impurity diffusion so as to prevent an abnormal diffusion phenomenon.BACKGROUND OF THE INVENTION
公开/授权文献
- US5611294A Multihulled air cushioned marine vehicle 公开/授权日：1997-03-18
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