发明授权
- 专利标题： Method for manufacturing a semiconductor device and the same
- 专利标题（中）： 制造半导体器件及其制造方法
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申请号： US57890申请日： 1970-06-18
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公开(公告)号： US3959810A公开(公告)日： 1976-05-25
- 发明人: Takanori Takeda
- 申请人： Takanori Takeda
- 申请人地址： JA
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JA
- 优先权： JA42-63057 19671002
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/223 ; H01L21/316 ; H01L29/00 ; H01L29/06 ; H01L29/08 ; H01L29/40 ; H01L29/34
摘要：
A method for manufacturing a PNP type planar transistor, diffusing an acceptor impurity in a non-oxidizing atmosphere to form a P type emitter region in one portion of an N type base region with a first silicon oxide film as a selective mask, depositing a second silicon oxide film from vapor phase on the surface of said emitter region, diffusing selectively a donor impurity in another portion of said base region with said first and second silicon oxide films as selective masks thereby to form an N type highly doped region in said base region.
公开/授权文献
- US6059066A Seatbelt usage indicator 公开/授权日：2000-05-09
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