发明授权
US4017886A Discrete semiconductor device having polymer resin as insulator and
method for making the same
失效
具有聚合物树脂作为绝缘体的分立半导体器件及其制造方法
- 专利标题： Discrete semiconductor device having polymer resin as insulator and method for making the same
- 专利标题（中）： 具有聚合物树脂作为绝缘体的分立半导体器件及其制造方法
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申请号： US578174申请日： 1975-05-16
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公开(公告)号： US4017886A公开(公告)日： 1977-04-12
- 发明人: Masami Tomono , Akira Abe , Seiki Harada , Kikuji Sato , Takeshi Takagi , Genichi Kamoshita , Yuichiro Oya , Atsushi Saiki
- 申请人： Masami Tomono , Akira Abe , Seiki Harada , Kikuji Sato , Takeshi Takagi , Genichi Kamoshita , Yuichiro Oya , Atsushi Saiki
- 申请人地址： JA
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JA
- 优先权： JA47-103588 19721018
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/312 ; H01L21/60 ; H01L21/607 ; H01L23/29 ; H01L23/485 ; H01L23/532 ; H01L23/30
摘要：
Disclosed is a discrete semiconductor device comprising a Si body having an emitter region, a base region and a collector region, an SiO.sub.2 layer disposed on the surface of the body, a polyimide resin having a thickness of 5 .mu. disposed on the SiO.sub.2 layer, electrodes penetrating through the SiO.sub.2 layer and the polyimide resin thereby contacting the emitter region and the base region, respectively and extending on the surface of the polyimide resin, whereby it becomes easy to bond a wire connected to an external electrode with the electrodes.
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