发明授权
- 专利标题: Method of producing thin layer methanation reaction catalyst
- 专利标题(中): 生产薄层甲烷化反应催化剂的方法
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申请号: US630881申请日: 1975-11-11
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公开(公告)号: US4043945A公开(公告)日: 1977-08-23
- 发明人: Yutaka Fukui , Fumio Hataya , Ryoichi Sasaki , Fumito Nakajima , Shimpei Matsuda , Munehiko Tonami , Ryo Hiraga
- 申请人: Yutaka Fukui , Fumio Hataya , Ryoichi Sasaki , Fumito Nakajima , Shimpei Matsuda , Munehiko Tonami , Ryo Hiraga
- 申请人地址: JA
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JA
- 优先权: JA49-128993 19741111
- 主分类号: B01J8/02
- IPC分类号: B01J8/02 ; B01J19/00 ; B01J19/24 ; B01J25/02 ; B01J35/02 ; C07C1/00 ; C07C1/04 ; C07C9/02 ; C07C9/04 ; C07C67/00 ; C10K3/04 ; C23C10/52 ; C25D7/00 ; B01J21/04 ; B01J23/74
摘要:
A catalyst layer is formed on the metallic surface of a structure constructing a reactor by diffusing a developable metal into the structure by the pack cementation method and developing the diffused metal. The catalyst layer is metallurgically combined with the structure, so that it has excellent mechanical strength and heat conductivity. Thus, by using the structure having the catalyst layer as a heat exchanger type methanation reactor it is possible to obtain a methanation reactor enabling an extremely enhanced rate of reaction to be obtained with superior operability and at great savings.
公开/授权文献
- US5801584A Constant-current circuit using field-effect transistor 公开/授权日:1998-09-01
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