发明授权
US4113550A Method for fabricating semiconductor device and etchant for polymer resin
失效
制备半导体器件的方法和聚合物树脂的蚀刻剂
- 专利标题： Method for fabricating semiconductor device and etchant for polymer resin
- 专利标题（中）： 制备半导体器件的方法和聚合物树脂的蚀刻剂
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申请号： US695040申请日： 1976-06-11
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公开(公告)号： US4113550A公开(公告)日： 1978-09-12
- 发明人: Atsushi Saiki , Toshio Okubo , Seiki Harada
- 申请人： Atsushi Saiki , Toshio Okubo , Seiki Harada
- 申请人地址： JP
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP
- 优先权： JP50-98179 19750813; JP49-96157 19740823
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/312 ; H01L21/768 ; H05K1/03 ; H05K3/00 ; H01L7/00 ; C09K13/00 ; C23F1/00
摘要：
A semiconductor device fabricated by forming a layer of semicured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said semicured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said semicured layer through said prescribed pattern, whereby said semicured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, curing said semicured polyimide so as to form a layer of said polyimide resin, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.
公开/授权文献
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