发明授权
- 专利标题： High temperature refractory metal contact assembly and multiple layer interconnect structure
- 专利标题（中）： 高温耐火金属接触组件和多层互连结构
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申请号： US791798申请日： 1977-04-28
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公开(公告)号： US4152823A公开(公告)日： 1979-05-08
- 发明人: John H. Hall
- 申请人： John H. Hall
- 申请人地址： CA Santa Clara
- 专利权人： Micro Power Systems
- 当前专利权人： Micro Power Systems
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/8238 ; H01L23/532 ; B01J17/00
摘要：
A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.
公开/授权文献
- US5867067A Critically-biased MOS current mirror 公开/授权日：1999-02-02
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