摘要:
An apparatus for digital radiography has a cassette adapted to obtain a digital image of a subject in response to incident radiation when receiving source power through an input power connector and adapted to provide the obtained digital image as output from a first data connector. A support tray is adapted to removably seat the cassette and has a second data connector that releasably engages with the first data connector on the cassette when the cassette is seated in the support tray. A wireless communication circuit in the support tray is energizable to transmit the digital image obtained from first data connector of the cassette to a host processor. A battery in the tray provides source power to at least the wireless communication circuit on the support tray circuitry and the input power connector of the seated cassette.
摘要:
An apparatus for digital radiography has a cassette adapted to obtain a digital image of a subject in response to incident radiation when receiving source power through an input power connector and adapted to provide the obtained digital image as output from a first data connector. A support tray is adapted to removably seat the cassette and has a second data connector that releasably engages with the first data connector on the cassette when the cassette is seated in the support tray. A wireless communication circuit in the support tray is energizable to transmit the digital image obtained from first data connector of the cassette to a host processor. A battery in the tray provides source power to at least the wireless communication circuit on the support tray circuitry and the input power connector of the seated cassette.
摘要:
A method for safely and efficiently requesting transportation services through the use of mobile communications devices capable of geographic location is described. Individual and package transportation may be provided. New customers may be efficiently serviced, and the requester and transportation provider locations may be viewed in real time on the mobile devices.
摘要:
Disclosed is an integrated transistor structure having increased conductance and operating speed including a complementary insulated gate field-effect transistor pair, each transistor including a source region and a drain region with a gate contact positioned over a channel region therebetween, an ohmic contact to the source regions, and a Schottky contact or PN rectifying junction to each of the drain regions. The dopant concentration of the drain regions is sufficiently low to prevent the Schottky contacts from forming ohmic contacts with the drain regions. The gates of the two transistors are interconnected and function as the input terminal, and the two Schottky contacts are interconnected as the output of the device. The operation of the device is such that the lightly doped drain regions act as bases of bipolar transistors, with the emitters formed by the Schottky and PN diodes. Majority carriers injected by the Schottky diodes modulate the channel regions, thereby lowering their resistivity and increasing the transconductance of the device without increasing the physical size or the capacitance of the device and thereby improving the speed of the device. Speed of operation in enhanced by providing dielectric material between the drain regions and the substrate.
摘要:
Disclosed is an integrated transistor structure having increased conductance and operating speed including a complementary insulated gate field-effect transistor pair, each transistor including a source region and drain region with a gate contact positioned therebetween, ohmic contacts to the source and drain regions, and a diode junction contact to each of the drain regions. The gates of the two transistors are interconnected and function as the input terminal, and the two diode junction contacts are interconnected as the output of the device. The operation of the device is such that the lightly-doped drain regions act as bases of bipolar transistors, with the emitters formed by the p-n junction diodes. The transconductors of the MOS transistors is multiplied by the beta of the bipolar transistors. The ohmic contacts to the drain regions can be interconnected, and the low on resistance of the opposite polarity drive transistor extracts any excess stored charge in the drain region. Two clocked transistors interconnect the complementary insulated gate field-effect transistor pair to voltage potentials whereby operation of the integrated transistor structure is clocked.
摘要:
This is an invention for a complementary transistor pair which includes an n-channel double-diffused-metal-oxide-semiconductor transistor having a source, a drain and an insulated gate. A Schottky barrier junction diode is formed to the drain of the n-channel transistor. The transistor pair also includes a p-channel double-diffused-metal-oxide-semiconductor transistor which also has a source, a drain and an insulated gate. A second Schottky barrier junction diode is formed to the drain of the p-channel transistor. The two Schottky diodes are electrically coupled to one another.
摘要:
An integrated circuit structure for isolating circuit structures in closely packed integrated circuits, and a method for making the same. The isolation structure includes a semiconductor body having a surface, an insulatory layer on the surface having an aperture and an offset adjacent to the aperture, the aperture and offset being filled with epitaxial semiconductor material, at least a portion of the epitaxial material being single crystal semiconductor, said structure being used for the fabrication of standard semiconductor devices. The method uses conventional processing techniques that require a minimum of additional cost over prior art, and yet provide a high degree of device isolation and density.
摘要:
For screening oversized objects and especially long slender particles wherein the long dimension of the particle is aligned in the direction of flow through a fluid-flow conduit, there is provided a screen comprising a pair of opposing corrugated surfaces, the folds or corrugations on the opposing surfaces being substantially parallel, and separated by a distance, and having a wave length, determined by the size particle to be screened. Preferably, the corrugated surfaces are formed as two sets of a plurality of corrugated plates inserted within and extending along the direction of fluid-flow in a conduit, the sets being relatively movable between a position where the two sets are interleaved, and a position where the two are separated.
摘要:
A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.
摘要:
A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.