Invention Grant
US4180432A Process for etching SiO.sub.2 layers to silicon in a moderate vacuum gas
plasma
失效
在中等真空气体等离子体中将SiO 2层蚀刻成硅的工艺
- Patent Title: Process for etching SiO.sub.2 layers to silicon in a moderate vacuum gas plasma
- Patent Title (中): 在中等真空气体等离子体中将SiO 2层蚀刻成硅的工艺
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Application No.: US861796Application Date: 1977-12-19
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Publication No.: US4180432APublication Date: 1979-12-25
- Inventor: Harold A. Clark
- Applicant: Harold A. Clark
- Applicant Address: NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: NY Armonk
- Main IPC: C30B33/00
- IPC: C30B33/00 ; B28B11/08 ; C30B33/12 ; H01L21/302 ; H01L21/3065 ; H01L21/308 ; H01L21/311 ; B44C1/22 ; C03C15/00 ; C03C25/06
Abstract:
Silicon dioxide is etched at about five times the rate of silicon in a moderate vacuum gas plasma formed from a mixture of CF.sub.4 and oxygen wherein the mixture contains above about 5 to about 15 percent by volume CF.sub.4 so that films of silicon dioxide on silicon can be etched to the silicon surface without excessive attack on the silicon. Silicon dioxide is etched at about three times the rate of silicon nitride so that silicon nitride can be used as an etch mask for the process.
Public/Granted literature
- US5941490A Holder for musical instrument, or the like Public/Granted day:1999-08-24
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