发明授权
US4186410A Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
失效
n型III族（a）-V（a）半导体的非合金欧姆接触
- 专利标题： Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
- 专利标题（中）： n型III族（a）-V（a）半导体的非合金欧姆接触
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申请号： US919624申请日： 1978-06-27
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公开(公告)号： US4186410A公开(公告)日： 1980-01-29
- 发明人: Alfred Y. Cho , James V. Di Lorenzo , William C. Niehaus
- 申请人： Alfred Y. Cho , James V. Di Lorenzo , William C. Niehaus
- 申请人地址： NJ Murray Hill
- 专利权人： Bell Telephone Laboratories, Incorporated
- 当前专利权人： Bell Telephone Laboratories, Incorporated
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L29/43
- IPC分类号： H01L29/43 ; H01L21/203 ; H01L21/28 ; H01L21/285 ; H01L29/45 ; H01L29/812 ; H01L29/80 ; H01L23/48 ; H01L29/46
摘要：
A nonalloyed ohmic contact (110-112, 120-122) to an n-type Group III(a)-V(a) compound semiconductor body (102-104) is formed by epitaxially growing a Group III(a)-V(a) n.sup.++ -layer (106-108, 106'-108') doped to at least 10.sup.19 cm.sup.-3 between the semiconductor body and a metal contact layer (110-112). The metal layer forms an ohmic contact without requiring heating above the eutectic temperature. In order to avoid contamination of the metal-semiconductor interface, a metal contact layer (120-122) may be deposited in situ after MBE growth of the n.sup.++ -layer. This technique results in both a metal-semiconductor interface with smoother morphology and also an ohmic contact without heating above the eutectic temperature. These procedures are specifically described with reference to the fabrication of GaAs FETs.
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