Invention Grant
- Patent Title: Epitaxial growth of magnetic memory film on implanted substrate
- Patent Title (中): 植入基片上磁记忆膜的外延生长
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Application No.: US122550Application Date: 1980-02-19
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Publication No.: US4290843APublication Date: 1981-09-22
- Inventor: Ralph Korenstein , Carlos A. Castro
- Applicant: Ralph Korenstein , Carlos A. Castro
- Applicant Address: TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: TX Dallas
- Main IPC: C30B19/02
- IPC: C30B19/02 ; C30B19/12 ; H01F41/28 ; H01F41/34 ; B44C1/22
Abstract:
A method for fabricating a magnetic memory film is disclosed wherein an epitaxial layer of magnetizable material is grown on the surface of a substrate which has been selectively implanted to damage portions of the crystalline surface. The resulting polycrystalline portion of the epitaxial layer grown on the damaged substrate surface is then selectively removed to leave the monocrystalline portions of the epitaxial layer.
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