发明授权
US4298629A Method for forming a nitride insulating film on a silicon semiconductor
substrate surface by direct nitridation
失效
通过直接氮化在硅半导体衬底表面上形成氮化物绝缘膜的方法
- 专利标题： Method for forming a nitride insulating film on a silicon semiconductor substrate surface by direct nitridation
- 专利标题（中）： 通过直接氮化在硅半导体衬底表面上形成氮化物绝缘膜的方法
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申请号： US128172申请日： 1980-03-07
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公开(公告)号： US4298629A公开(公告)日： 1981-11-03
- 发明人: Takao Nozaki , Takashi Ito , Hideki Arakawa , Hajime Ishikawa , Masaichi Shinoda
- 申请人： Takao Nozaki , Takashi Ito , Hideki Arakawa , Hajime Ishikawa , Masaichi Shinoda
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX54-27301 19790309
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; C01B21/068 ; H01L21/318 ; C23C11/00
摘要：
In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. In the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300.degree. C. within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period by direct nitridation of silicon.
公开/授权文献
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