公开(公告)号：US4298629A

公开(公告)日：1981-11-03

申请号：US128172

申请日：1980-03-07

申请人： Takao Nozaki ,  Takashi Ito ,  Hideki Arakawa ,  Hajime Ishikawa ,  Masaichi Shinoda

发明人： Takao Nozaki ,  Takashi Ito ,  Hideki Arakawa ,  Hajime Ishikawa ,  Masaichi Shinoda

IPC分类号： H01L29/78 ,  C01B21/068 ,  H01L21/318 ,  C23C11/00

CPC分类号： H01L21/3185 ,  H01L21/318

摘要： In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. In the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300.degree. C. within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period by direct nitridation of silicon.

摘要翻译： 在半导体衬底表面上形成绝缘膜的方法中，绝缘膜的氮化硅通过等离子体CVD或直接氮化形成。 在本发明中，在直接氮化反应室中产生含氮气体的气体等离子体，在气体等离子体气氛中将半导体硅体加热至约800〜约1300℃的温度，由此 形成氮化硅膜。 所得到的氮化硅膜具有致密结构和低氧浓度，并且通过硅的直接氮化在短时间内形成厚的氮化硅膜。

公开(公告)号：US4343657A

公开(公告)日：1982-08-10

申请号：US174134

申请日：1980-07-31

申请人： Takashi Ito ,  Hajime Ishikawa ,  Masaichi Shinoda

发明人： Takashi Ito ,  Hajime Ishikawa ,  Masaichi Shinoda

IPC分类号： H01L21/283 ,  H01L21/318 ,  H01L21/32 ,  H01L21/336 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L21/22

CPC分类号： H01L27/1085 ,  H01L21/3185 ,  H01L21/32 ,  H01L27/10805 ,  H01L29/66575 ,  H01L29/78

摘要： In the production of a semiconductor device including an MISFET or a one transistor-one capacitor-memory cell, the excellent oxidation resistance of a silicon nitride film formed by direct nitridation, as well as the great oxidation tendency of a covering layer made of, for example, polycrystalline silicon selectively formed on the silicon nitride film, are utilized so as to form various regions of the semiconductor device in self alignment and to prevent a short circuit between such regions.A process according to the present invention comprises the steps of: selectively covering a semiconductor substrate with a relatively thick field insulation film; forming, on the exposed part of the semiconductor substrate, a relatively thin nitride film by direct nitridation; and selectively forming a film of silicon or a metal silicide on the silicon nitride film. A capacitor made of the silicon nitride is formed between the silicon or silicide film and the semiconductor substrate. The capacitor may be one for storing information.

摘要翻译： 在制造包括MISFET或一个晶体管一个电容器存储单元的半导体器件中，通过直接氮化形成的氮化硅膜的优异的抗氧化性，以及由 例如，选择性地形成在氮化硅膜上的多晶硅被利用，以便自对准地形成半导体器件的各个区域并防止这些区域之间的短路。 根据本发明的方法包括以下步骤：用相对较厚的场绝缘膜选择性地覆盖半导体衬底; 通过直接氮化在半导体衬底的暴露部分上形成相对较薄的氮化物膜; 并且在氮化硅膜上选择性地形成硅或金属硅化物的膜。 在硅或硅化物膜和半导体衬底之间形成由氮化硅制成的电容器。 电容器可以是用于存储信息的电容器。

公开(公告)号：US5101249A

公开(公告)日：1992-03-31

申请号：US859237

申请日：1986-05-06

申请人： Shinpei Hijiya ,  Takao Nozaki ,  Takashi Ito ,  Hajime Ishikawa

发明人： Shinpei Hijiya ,  Takao Nozaki ,  Takashi Ito ,  Hajime Ishikawa

IPC分类号： H01L21/8247 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/7886

摘要： A nonvolatile semiconductor memory device comprising: a substrate, a pair of source and drain regions; a channel region between the source and drain regions; a pair of first and second insulating layers on the channel region, and a floating-gate or traps between the first and second insulating layer. The band gap of the first insulating layer increases gradually from the substrate to the floating gate or the traps.

摘要翻译： 一种非易失性半导体存储器件，包括：衬底，一对源极和漏极区; 源区和漏区之间的沟道区; 沟道区域上的一对第一和第二绝缘层，以及在第一和第二绝缘层之间的浮栅或阱。 第一绝缘层的带隙从衬底到浮栅或陷阱逐渐增加。

公开(公告)号：US4435447A

公开(公告)日：1984-03-06

申请号：US322718

申请日：1981-11-18

申请人： Takashi Ito ,  Takao Nozaki

发明人： Takashi Ito ,  Takao Nozaki

IPC分类号： C04B41/50 ,  C04B41/87 ,  H01L21/318 ,  B05D5/12

CPC分类号： C04B41/009 ,  C04B41/5066 ,  C04B41/87 ,  H01L21/3185 ,  C04B2111/00844

摘要： A method for forming an insulating film on the surface of a silicon semiconductor substrate of a semiconductor device. The semiconductor substrate is subjected to a direct thermal nitridation, in a gas atmosphere containing nitrogen or nitrogen atoms. The semiconductor substrate has an average concentration of oxygen of not more than 10.sup.18 /cm.sup.3. The silicon nitride film formed by the direct thermal nitridation is thin, even and amorphous. The structure of the interface between the silicon substrate and the silicon nitride film is highly dense.

摘要翻译： 一种在半导体器件的硅半导体衬底的表面上形成绝缘膜的方法。 半导体衬底在含有氮或氮原子的气氛中进行直接热氮化。 半导体衬底的平均氧浓度不大于1018 / cm3。 通过直接热氮化形成的氮化硅膜是薄的，均匀的和无定形的。 硅衬底和氮化硅膜之间的界面的结构是高密度的。

公开(公告)号：US4353936A

公开(公告)日：1982-10-12

申请号：US252974

申请日：1980-09-05

申请人： Takao Nozaki ,  Takashi Ito

发明人： Takao Nozaki ,  Takashi Ito

IPC分类号： H01L21/318 ,  B05D5/12 ,  B44C1/22 ,  H01L21/306

CPC分类号： H01L21/3185 ,  Y10S438/909 ,  Y10S438/974

摘要： A silicon nitride film is generated by heating a silicon substrate having an exposed surface in an ambient including ammonia thereby causing the exposed silicon to react with nitrogen atoms. The substrate is heated to a temperature of at least 900.degree. C. in an inert gas, such as argon, whereby the natural oxide film or impurity particles on the surface are subject to vapor etching. The substrate is then heated to a temperature in a range of 900.degree. C. to 1300.degree. C. in the ambient, including ammonia, to produce a dense and homogeneous amorphous silicon nitride film.

摘要翻译： PCT No.PCT / JP79 / 00046 Sec。 371日期1980年9月5日 102（e）1980年9月5日PCT PCT日期为1979年2月27日。通过在包括氨的环境中加热具有暴露表面的硅衬底产生氮化硅膜，从而使暴露的硅与氮原子反应。 将衬底在诸如氩气的惰性气体中加热到至少900℃的温度，由此表面上的天然氧化物膜或杂质颗粒经历气相蚀刻。 然后将基底在包括氨的环境中加热到900℃至1300℃的温度，以产生致密且均匀的非晶氮化硅膜。

公开(公告)号：US4331710A

公开(公告)日：1982-05-25

申请号：US212083

申请日：1980-09-08

申请人： Takao Nozaki ,  Takashi Ito

发明人： Takao Nozaki ,  Takashi Ito

IPC分类号： H01L21/318

CPC分类号： H01L21/3185 ,  Y10S148/112 ,  Y10S148/114

摘要： In a method of forming an insulating film on the surface of a silicon substrate, a silicon nitride film is formed on such surface by direct thermal nitridation. The nitridation is initially in an ambient gas of nitrogen whereby a comparatively thick silicon nitride film is formed. The ambient gas is then changed to ammonia or a mixture of an inert gas and ammonia to densify the silicon nitride film. The resultant film is useful as an insulating film in semiconductor devices, masks for impurity diffusion and selective oxidation in the manufacture thereof.

摘要翻译： PCT No.PCT / JP79 / 00039 Sec。 371日期1980年9月8日第 102（e）1980年9月8日PCT申请日1979年2月19日PCT公布。 出版物WO80 / 01739 日本1980年8月21日。在硅衬底表面上形成绝缘膜的方法中，通过直接热氮化在这种表面上形成氮化硅膜。 氮化最初处于氮气的环境气体中，由此形成较厚的氮化硅膜。 然后将环境气体变为氨或惰性气体和氨的混合物以致密化氮化硅膜。 所得膜可用作半导体器件中的绝缘膜，其制造中用于杂质扩散和选择性氧化的掩模。

公开(公告)号：US4282270A

公开(公告)日：1981-08-04

申请号：US84570

申请日：1979-10-15

申请人： Takao Nozaki ,  Takashi Ito

发明人： Takao Nozaki ,  Takashi Ito

IPC分类号： H01L21/318 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/3144 ,  Y10S438/909

摘要： An insulating film layer consisting of silicon oxynitride is formed on a silicon semiconductor substrate surface by bringing a surface of a silicon substrate into contact with an ammonia gas atmosphere containing a gas comprising containing substance gas, for example, oxygen gas, carbon dioxide gas, carbon monoxide gas, nitrogen monoxide gas, nitrogen dioxide gas, or water vapor, in a volume concentration of from 10.sup.2 to 10.sup.4 ppm in terms of molecular oxygen, at an elevated temperature, for example, of from 900.degree.to 1300.degree. C.

摘要翻译： 通过使硅衬底的表面与包含含有物质气体的气体的氨气气氛例如氧气，二氧化碳气体，碳气体形成在硅半导体衬底表面上，形成由氮氧化硅组成的绝缘膜层 一氧化碳气体，一氧化氮气体，二氧化氮气体或水蒸气，在分子氧方面的体积浓度为102〜104ppm，例如在900〜1300℃。

公开(公告)号：US4980307A

公开(公告)日：1990-12-25

申请号：US401489

申请日：1989-08-30

申请人： Takashi Ito ,  Takao Nozaki

发明人： Takashi Ito ,  Takao Nozaki

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51 ,  H01L21/265

CPC分类号： H01L21/28202 ,  H01L21/3144 ,  H01L21/3185 ,  H01L27/10805 ,  H01L27/1085 ,  H01L27/10873 ,  H01L29/51 ,  H01L29/511 ,  H01L21/28167 ,  Y10S148/043 ,  Y10S148/112 ,  Y10S148/114

摘要： An insulative film, such as SiO.sub.2, Si.sub.3 N.sub.4 and PSG films, for example, is commonly used the passivation film or gate electrode of MISFETs. Stability of the insulative films during the production or operation of the semiconductor devices is enhanced by providing an insulative film which is formed by nitridation, for example, in an NH.sub.3 gas, of an SiO.sub.2 film, preferably a directly thermally oxidized film of silicon. The insulative film according to the present invention is used for a gate insulation film in MISFETs, a capacitor or passivation film for semiconductor devices, and as a mask for selectively forming circuit elements of semiconductor devices. The process for forming the insulative film may comprise successive nitridation, oxidation and nitridation steps.

公开(公告)号：US4621277A

公开(公告)日：1986-11-04

申请号：US372720

申请日：1982-04-28

申请人： Takashi Ito ,  Takao Nozaki

发明人： Takashi Ito ,  Takao Nozaki

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51 ,  H01L29/34

CPC分类号： H01L21/28202 ,  H01L21/3144 ,  H01L21/3185 ,  H01L27/10805 ,  H01L27/1085 ,  H01L27/10873 ,  H01L29/51 ,  H01L29/511 ,  H01L21/28167 ,  Y10S148/043 ,  Y10S148/112 ,  Y10S148/114

摘要： An insulative film, such as SiO.sub.2, Si.sub.3 N.sub.4 and PSG films, is commonly used, for example, the passivation film or to insulate the gate electrode of MISFETs. Stability of the insulative films during the production or operation of the semiconductor devices is enhanced by providing an insulative film which is formed by nitridation, for example, in an NH.sub.3 gas, of an SiO.sub.2 film, preferably a directly thermally oxidized film of silicon. The insulative film according to the present invention is used for a gate insulation film in MISFETs, a capacitor or passivation film for semiconductor devices, and as a mask for selectively forming circuit elements of semiconductor devices. The process for forming the insulative film may comprise successive nitridation, oxidation and nitridation steps.

摘要翻译： 通常使用诸如SiO 2，Si 3 N 4和PSG膜的绝缘膜，例如钝化膜或使MISFET的栅电极绝缘。 通过提供通过例如在NH 3气体中形成SiO 2膜，优选直接热氧化的硅膜形成的绝缘膜来增强半导体器件的生产或操作期间的绝缘膜的稳定性。 根据本发明的绝缘膜用于MISFET中的栅极绝缘膜，用于半导体器件的电容器或钝化膜，以及用于选择性地形成半导体器件的电路元件的掩模。 形成绝缘膜的方法可以包括连续的氮化，氧化和氮化步骤。

公开(公告)号：US10230112B2

公开(公告)日：2019-03-12

申请号：US14119308

申请日：2012-05-22

申请人： Yusuke Kato ,  Takashi Ito ,  Masami Yanagida ,  Satoshi Oku ,  Hiroyuki Ogino ,  Masato Kusakabe ,  Ryutaro Mukai ,  Masahiro Kojima ,  Takashi Kikuchi ,  Akiko Waki ,  Shiho Inoue ,  Shigeo Ibuka ,  Yasuyuki Tanaka ,  Yoshio Shimoida ,  Yuji Muroya ,  Norihisa Waki

发明人： Yusuke Kato ,  Takashi Ito ,  Masami Yanagida ,  Satoshi Oku ,  Hiroyuki Ogino ,  Masato Kusakabe ,  Ryutaro Mukai ,  Masahiro Kojima ,  Takashi Kikuchi ,  Akiko Waki ,  Shiho Inoue ,  Shigeo Ibuka ,  Yasuyuki Tanaka ,  Yoshio Shimoida ,  Yuji Muroya ,  Norihisa Waki

IPC分类号： H01M4/66 ,  H01M10/052 ,  H01M4/02

摘要： A conductive film includes a layer 1 formed by a conductive material 1 that includes a polymer material 1 containing any of (1) an amine and an epoxy resin (where the epoxy resin and the amine are mixed in a ratio of 1.0 or more in terms of the ratio of the number of active hydrogen atoms in the amine with respect to the number of functional groups in the epoxy resin), (2) a phenoxy resin and an epoxy resin, (3) a saturated hydrocarbon polymer having a hydroxyl group, and (4) a curable resin and an elastomer and conductive particles 1. The conductive film has excellent stability in an equilibrium potential environment in a negative electrode and low electric resistance per unit area in the thickness direction. A multilayer conductive film including the conductive film achieves excellent interlayer adhesion, and using them as a current collector enables the production of a battery satisfying both weight reduction and durability.