发明授权
- 专利标题: Method of making a high density V-MOS memory array
- 专利标题(中): 制造高密度V-MOS存储器阵列的方法
-
申请号: US173508申请日: 1980-07-28
-
公开(公告)号: US4326332A公开(公告)日: 1982-04-27
- 发明人: Donald M. Kenney
- 申请人: Donald M. Kenney
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corp.
- 当前专利权人: International Business Machines Corp.
- 当前专利权人地址: NY Armonk
- 主分类号: H01L27/10
- IPC分类号: H01L27/10 ; H01L21/306 ; H01L21/768 ; H01L21/8242 ; H01L27/108 ; H01L29/74 ; H01L29/749 ; H01L29/78 ; H01L21/265 ; H01L21/308
摘要:
A method for providing high density dynamic memory cells which provides self-alignment of both V-MOSFET device elements and their interconnections through the use of a device-defining masking layer having a plurality of parallel thick and thin regions. Holes are etched in portions of the thin regions with the use of an etch mask defining a plurality of parallel regions aligned perpendicular to the regions in the masking layer. V-MOSFET devices having self-aligned gate electrodes are formed in the holes and device interconnecting lines are formed under the remaining portions of the thin regions. A combination of anisotropic etching and directionally dependent etching, such as reaction ion etching, may be used to extend the depth of V-grooves. A method of eliminating the overhang of a masking layer after anisotropic etching includes the oxidation of the V-groove followed by etching to remove both the grown oxide and the overhang is also disclosed.
公开/授权文献
- US6156634A Method of fabricating local interconnect 公开/授权日:2000-12-05