发明授权
- 专利标题： Transistor device
- 专利标题（中）： 晶体管器件
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申请号： US156370申请日： 1980-06-04
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公开(公告)号： US4339765A公开(公告)日： 1982-07-13
- 发明人: Junichi Nakamura , Seiji Hata , Iwao Yamasaki
- 申请人： Junichi Nakamura , Seiji Hata , Iwao Yamasaki
- 申请人地址： JPX
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX
- 优先权： JPX54-73874 19790612
- 主分类号： H01L21/8224
- IPC分类号： H01L21/8224 ; H01L21/331 ; H01L27/082 ; H01L29/08 ; H01L29/72 ; H01L29/73 ; H01L29/735 ; H01L29/06
摘要：
A lateral type multi-collector transistor which has a first collector region which subtends an angle .theta..sub.1 at the center of the emitter region and which has an effective plane distance W.sub.B1 from this center; and a second collector region which subtends an angle of .theta..sub.2 at the center of the emitter region and which has an effective plane distance W.sub.B2 from this center such that .theta..sub.1 W.sub.B2.
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