Transistor device
    1.
    发明授权
    Transistor device 失效
    晶体管器件

    公开(公告)号:US4339765A

    公开(公告)日:1982-07-13

    申请号:US156370

    申请日:1980-06-04

    摘要: A lateral type multi-collector transistor which has a first collector region which subtends an angle .theta..sub.1 at the center of the emitter region and which has an effective plane distance W.sub.B1 from this center; and a second collector region which subtends an angle of .theta..sub.2 at the center of the emitter region and which has an effective plane distance W.sub.B2 from this center such that .theta..sub.1 W.sub.B2.

    摘要翻译: 一种横向型多集电极晶体管,其具有第一集电极区域,该第一集电极区域在发射极区域的中心处对角度θ1并且具有与该中心有效的平面距离WB1; 以及第二集电极区域,其在发射极区域的中心处对着θ2的角度并且具有从该中心的有效平面距离WB2,使得θ1 <θ2和WB1> WB2。