发明授权
- 专利标题： Method of producing a semiconductor device
- 专利标题（中）： 半导体装置的制造方法
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申请号： US182825申请日： 1980-08-29
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公开(公告)号： US4351674A公开(公告)日： 1982-09-28
- 发明人: Isao Yoshida , Yasuo Wada , Masao Tamura , Masanobu Miyao , Makoto Ohkura , Nobuyoshi Natsuaki , Takashi Tokuyama
- 申请人： Isao Yoshida , Yasuo Wada , Masao Tamura , Masanobu Miyao , Makoto Ohkura , Nobuyoshi Natsuaki , Takashi Tokuyama
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX54-109165 19790829
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/22 ; H01L21/268 ; H01L21/3215 ; H01L21/822 ; H01L29/78 ; H01L21/265 ; H01L21/263
摘要：
A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
公开/授权文献
- US4893209A Multifunctional magnetic head cleaning media 公开/授权日：1990-01-09
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