公开(公告)号：US4351674A

公开(公告)日：1982-09-28

申请号：US182825

申请日：1980-08-29

申请人： Isao Yoshida ,  Yasuo Wada ,  Masao Tamura ,  Masanobu Miyao ,  Makoto Ohkura ,  Nobuyoshi Natsuaki ,  Takashi Tokuyama

发明人： Isao Yoshida ,  Yasuo Wada ,  Masao Tamura ,  Masanobu Miyao ,  Makoto Ohkura ,  Nobuyoshi Natsuaki ,  Takashi Tokuyama

IPC分类号： H01L27/04 ,  H01L21/22 ,  H01L21/268 ,  H01L21/3215 ,  H01L21/822 ,  H01L29/78 ,  H01L21/265 ,  H01L21/263

CPC分类号： H01L21/268 ,  H01L21/32155 ,  Y10S148/091

摘要： A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.

摘要翻译： 含有高浓度杂质的区域和与其相邻的期望区域通过用激光束照射而熔化，从而将横向杂质扩散到所需区域并使所需区域呈现低电阻。 由于该方法只能执行杂质的横向扩散而不影响其它部分，因此形成高击穿电压MIS-FET，电阻等非常有用。

公开(公告)号：US4394191A

公开(公告)日：1983-07-19

申请号：US217224

申请日：1980-12-17

申请人： Yasuo Wada ,  Hiroo Usui ,  Makoto Ohkura ,  Masanobu Miyao ,  Masao Tamura ,  Takashi Tokuyama

发明人： Yasuo Wada ,  Hiroo Usui ,  Makoto Ohkura ,  Masanobu Miyao ,  Masao Tamura ,  Takashi Tokuyama

IPC分类号： C01B33/02 ,  C23C16/24 ,  H01L21/20 ,  H01L21/268 ,  H01L29/04 ,  H01L29/36 ,  H01L21/263 ,  B05D3/06

CPC分类号： H01L21/268 ,  H01L29/04 ,  H01L29/36 ,  Y10S438/934

摘要： A polycrystalline silicon film is implanted with an impurity in large amounts and is heated to be annealed, whereupon it is irradiated with a laser beam to be annealed.Thus, a polycrystalline silicon film of very low resistivity consisting of a second layer whose activated impurity concentration is equal to or below a solid solubility and a first layer whose activated impurity concentration is above the solid solubility is formed.

摘要翻译： 多晶硅膜被大量注入杂质，并加热退火，然后用待退火的激光束进行照射。 因此，形成具有活性杂质浓度等于或低于固体溶解度的第二层和活性杂质浓度高于固溶度的第一层的非常低电阻率的多晶硅膜。

公开(公告)号：US4808546A

公开(公告)日：1989-02-28

申请号：US9476

申请日：1987-02-02

申请人： Masahiro Moniwa ,  Masanobu Miyao ,  Shoji Shukuri ,  Eiichi Murakami ,  Terunori Warabisako ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Yuuichi Madokoro ,  Yasuo Wada

发明人： Masahiro Moniwa ,  Masanobu Miyao ,  Shoji Shukuri ,  Eiichi Murakami ,  Terunori Warabisako ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Yuuichi Madokoro ,  Yasuo Wada

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L21/265 ,  H01L21/26

CPC分类号： H01L29/66772 ,  H01L21/2022 ,  H01L21/76248 ,  Y10S148/003 ,  Y10S148/048 ,  Y10S148/09 ,  Y10S148/154

摘要： Of an amorphous Si film, a region to be formed into a lowly doped region such as the channel region of an MOS transistor is covered with a mask and an uncovered region is doped with an impurity. After this, the amorphous Si film is annealed and turned to signal crystal through solid phase epitaxial growth, and the mask itself is used as the electrode of a semiconductor device. By this impurity doping, a large-sized single-crystal Si film can be formed, and the impurity doping can be conducted in self-alignment with the electrode formation to produce a highly integrated semiconductor circuit.

摘要翻译： 在非晶Si膜中，用掩模覆盖要形成诸如MOS晶体管的沟道区域的低掺杂区域的区域，并且未覆盖区域掺杂有杂质。 之后，通过固相外延生长使非晶Si膜退火并转向信号晶体，并且将掩模本身用作半导体器件的电极。 通过这种杂质掺杂，可以形成大尺寸的单晶Si膜，并且杂质掺杂可以与电极形成自对准，以产生高度集成的半导体电路。

公开(公告)号：US4655875A

公开(公告)日：1987-04-07

申请号：US836233

申请日：1986-03-04

申请人： Yasuo Wada ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu

发明人： Yasuo Wada ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu

IPC分类号： H01L21/266 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23C1/02

CPC分类号： H01L21/266 ,  Y10S438/945

摘要： Ions having a high energy is implanted using a mask of a stacked film consisting of a film formed from an amorphous material and a film formed from a metal having a large mass number.In this way, penetration of ions can be prohibited by a mask having a far smaller thickness than that of the conventional mask. Thus ions having a high energy can be implanted with a very high accuracy.

摘要翻译： 使用由由非晶材料形成的膜和由质量大的金属形成的膜构成的层叠膜的掩模来注入具有高能量的离子。 以这种方式，可以通过具有比常规掩模的厚度更小的掩模的掩模来阻止离子的穿透。 因此，可以以非常高的精度植入具有高能量的离子。

公开(公告)号：US4729964A

公开(公告)日：1988-03-08

申请号：US852184

申请日：1986-04-15

申请人： Nobuyoshi Natsuaki ,  Masao Tamura ,  Yasuo Wada ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Hidekazu Okuhira ,  Akira Shintani ,  Shoji Syukuri

发明人： Nobuyoshi Natsuaki ,  Masao Tamura ,  Yasuo Wada ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Hidekazu Okuhira ,  Akira Shintani ,  Shoji Syukuri

IPC分类号： H01L21/265 ,  H01L21/266 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L21/22

CPC分类号： H01L21/2652 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823892 ,  H01L27/0928

摘要： First conductivity type impurity ions are implanted at a predetermined depth all over a region where impurity ions are to be implanted, and second conductivity type impurity ions are implanted in a dose about twice as large as that of the first conductivity type impurity ions at substantially the same implantation depth of the first conductivity type impurity ions, followed by annealing.In this way, mutually contiguous first and second conductivity type regions having substantially the same impurity concentrations and located at substantially the same depths are formed.

摘要翻译： 第一导电类型的杂质离子注入在杂质离子注入区域上的预定深度处，并且第二导电类型杂质离子以基本上为第一导电类型杂质离子的剂量约为两倍的剂量注入 第一导电型杂质离子的相同注入深度，然后进行退火。 以这种方式，形成具有基本上相同的杂质浓度并且位于基本上相同的深度处的相互邻接的第一和第二导电类型区域。

公开(公告)号：US4609407A

公开(公告)日：1986-09-02

申请号：US563036

申请日：1983-12-19

申请人： Tamura Masao ,  Hirotsugu Kozuka ,  Yasuo Wada ,  Makoto Ohkura ,  Tamura Hiroshi ,  Takashi Tokuyama ,  Takahiro Okabe ,  Osamu Minato ,  Shinya Ohba

发明人： Tamura Masao ,  Hirotsugu Kozuka ,  Yasuo Wada ,  Makoto Ohkura ,  Tamura Hiroshi ,  Takashi Tokuyama ,  Takahiro Okabe ,  Osamu Minato ,  Shinya Ohba

IPC分类号： H01L21/268 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/04 ,  H01L21/265 ,  H01L21/26

CPC分类号： H01L21/8221 ,  H01L21/268 ,  H01L27/0233 ,  H01L27/0688 ,  H01L29/04

摘要： Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.

摘要翻译： 这里公开了一种半导体器件，其具有形成在单晶半导体膜中的至少一个下电阻区域，该至少一个下电阻区域被形成为连续地涂覆单晶半导体衬底和形成在衬底表面上的绝缘膜。 由于使用上述单晶半导体膜，因此可以获得从现有技术的半导体器件中获得的许多优点。 通过用激光束照射多晶或非晶半导体膜来形成上述单晶半导体膜。

公开(公告)号：US4742025A

公开(公告)日：1988-05-03

申请号：US795271

申请日：1985-11-05

申请人： Kiyonori Ohyu ,  Nobuyoshi Natsuaki ,  Msao Tamura ,  Yasuo Wada

发明人： Kiyonori Ohyu ,  Nobuyoshi Natsuaki ,  Msao Tamura ,  Yasuo Wada

IPC分类号： H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/283 ,  H01L21/326

CPC分类号： H01L21/31111 ,  H01L21/32105 ,  H01L21/32134 ,  Y10S438/911

摘要： A desired portion of a refractory metal silicide film is oxidized by anodic oxidation to form oxides of silicon and of metal. The oxides formed are completely removed by etching. By so doing, the desired portion of the silicide film can be etched selectively without badly damaging an underlying silicon substrate or silicon dioxide film. Therefore, it is possible to easily affect patterning of the silicide film used for electrodes of MOS transistors and bipolar transistors as well as resistors and interconnections.

摘要翻译： 难熔金属硅化物膜的期望部分通过阳极氧化被氧化以形成硅和金属的氧化物。 形成的氧化物通过蚀刻被完全去除。 通过这样做，可以选择性地蚀刻硅化物膜的期望部分，而不会严重损坏下面的硅衬底或二氧化硅膜。 因此，可以容易地影响用于MOS晶体管和双极晶体管的电极以及电阻和互连的硅化物膜的图案化。

公开(公告)号：US4716127A

公开(公告)日：1987-12-29

申请号：US852317

申请日：1986-04-15

申请人： Shoji Shukuri ,  Masao Tamura ,  Yasuo Wada ,  Yoshihisa Fujisaki

发明人： Shoji Shukuri ,  Masao Tamura ,  Yasuo Wada ,  Yoshihisa Fujisaki

IPC分类号： H01J37/317 ,  H01L21/265 ,  H01L21/8252 ,  G01N23/00

CPC分类号： H01L21/265 ,  H01L21/26546 ,  H01L21/8252

摘要： A desired part of a workpiece is irradiated with a focused ion beam which contains at least two species of impurity ions to-be-implanted exhibiting different spacial distributions of ion current densities.Thus, regions respectively implanted with different species of impurity ions can be formed in a predetermined positional relationship at high precision.

摘要翻译： 用聚焦离子束照射工件的所需部分，该聚焦离子束含有离子电流密度不同的空间分布的待植入的至少两种杂质离子种类。 因此，可以高精度地以预定的位置关系形成分别注入不同种类的杂质离子的区域。

公开(公告)号：US4377421A

公开(公告)日：1983-03-22

申请号：US186743

申请日：1980-09-12

申请人： Yasuo Wada ,  Takahide Ikeda ,  Masao Tamura

发明人： Yasuo Wada ,  Takahide Ikeda ,  Masao Tamura

IPC分类号： H01L29/73 ,  H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/331 ,  H01L29/04 ,  H01L29/08 ,  H01L29/72 ,  H01L21/263

CPC分类号： H01L28/20 ,  H01L21/268 ,  H01L29/04 ,  H01L29/0804 ,  H01L29/72 ,  Y10S117/904 ,  Y10S148/092

摘要： An insulating film is formed on a semiconductor substrate, and the insulating film on that part of the semiconductor substrate where an emitter is to be formed, is removed to expose the surface of the above part. A polycrystalline or amorphous silicon film is deposited on the entire surface, and then irradiated with a laser beam to convert that portion of the polycrystalline or amorphous silicon film which is deposited on the surface of the semiconductor substrate without interposing the insulating film therebetween, into a single crystal of silicon, thereby forming a stacked emitter.

摘要翻译： 在半导体衬底上形成绝缘膜，并且去除要形成发射极的半导体衬底的那部分上的绝缘膜，以露出上述部分的表面。 多晶或非晶硅膜沉积在整个表面上，然后用激光束照射，以将沉积在半导体衬底的表面上的多晶硅或非晶硅膜的那部分转换成其间的绝缘膜， 硅单晶，从而形成堆叠的发射极。

公开(公告)号：USD626910S1

公开(公告)日：2010-11-09

申请号：US29344709

申请日：2009-10-02

申请人： Andreas Bott ,  Boris Erceg ,  Markus Brachtl ,  Yasuo Wada

设计人： Andreas Bott ,  Boris Erceg ,  Markus Brachtl ,  Yasuo Wada