发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US208391申请日： 1980-11-19
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公开(公告)号： US4352724A公开(公告)日： 1982-10-05
- 发明人: Kenji Sugishima , Tadakazu Takada
- 申请人： Kenji Sugishima , Tadakazu Takada
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX54-154003 19791128
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/033 ; H01L21/302 ; H01L21/3065 ; H01L21/311 ; H01L21/3213 ; H01L21/768 ; C23C15/00 ; C23F1/00
摘要：
A method of manufacturing a semiconductor device having a multi-layer structure comprises the steps of patterning in accordance with a predetermined pattern a thin film of photoresist formed on a film to be etched which has been formed on a semiconductor substrate, etching the film to be etched partly by an isotropic etching using said patterned film as a mask, completing the etching by an anisotropic etching in the direction of its depth, resulting in tapered or inclined sides on the etched film. The isotropic and anisotropic etchings may be carried out in the same apparatus by changing the reactive gases used in these etchings and/or the conditions of each etching, such as the amount of gas, the gas pressure and the applied radio frequency power.
公开/授权文献
- US6000498A Safety/debris net system 公开/授权日：1999-12-14
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