A termination circuit for word lines of a static semiconductor memory device comprising, for each word line, a first transistor which detects a potential change on the word line, a delay circuit which delays an output signal from the first transistor by a predetermined time period and a second transistor which is turned on and off by an output signal from the delay circuit. Each of the second transistors is connected between one of the hold lines and a common hold current source, so that the second transistors and the common hold current source forming a current switch.