发明授权
- 专利标题： Process for forming contact openings through oxide layers
- 专利标题（中）： 通过氧化物层形成接触孔的方法
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申请号： US248013申请日： 1981-03-26
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公开(公告)号： US4372034A公开(公告)日： 1983-02-08
- 发明人: Mark T. Bohr
- 申请人： Mark T. Bohr
- 申请人地址： CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/768 ; H01L21/265 ; H01L21/31
摘要：
A process is described for forming an opening for a contact member through a deposited oxide layer and thermally grown oxide layer. Where the deposited oxide layer is rich in phosphorus, a wet etchant is used to etch through the deposited oxide layer. This results in a tapered opening through the deposited oxide layer. Then a plasma etchant is used to form an opening through the thermally grown oxide in alignment with an opening through a photoresist layer.
公开/授权文献
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