发明授权
- 专利标题： Zone purification of silicon in a reactive plasma
- 专利标题（中）： 反应性等离子体中硅的区域纯化
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申请号： US287789申请日： 1981-07-28
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公开(公告)号： US4399116A公开(公告)日： 1983-08-16
- 发明人: Jacques Amouroux , Daniel Morvan
- 申请人： Jacques Amouroux , Daniel Morvan
- 申请人地址： FRX Paris
- 专利权人： Electricite de France (Service National)
- 当前专利权人： Electricite de France (Service National)
- 当前专利权人地址： FRX Paris
- 优先权： FRX8017120 19800808
- 主分类号： C30B13/00
- IPC分类号： C30B13/00 ; C30B13/22 ; C01B33/02
摘要：
Boron is removed from silicon by zone melting purification. A jet of hot plasma obtained by high frequency excitation is directed on a zone of a bar of silicon to be purified. The plasma is formed from a mixture of a plasma-producing gas, such as argon, and an amount of oxygen which is sufficiently low to avoid oxidization of silicon.
公开/授权文献
- US5441181A Piston with a flexible wipe 公开/授权日：1995-08-15
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