公开(公告)号：US09970124B2

公开(公告)日：2018-05-15

申请号：US15107095

申请日：2015-03-13

Applicant: Shin Akutsu

Inventor： Shin Akutsu

IPC: C30B13/16 ,  C30B13/24 ,  C30B13/22 ,  C30B13/32 ,  C30B29/66 ,  C30B13/28

CPC classification number: C30B13/24 ,  C30B13/16 ,  C30B13/22 ,  C30B13/285 ,  C30B13/32 ,  C30B29/66

Abstract: A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.

公开(公告)号：US09458553B2

公开(公告)日：2016-10-04

申请号：US14780444

申请日：2014-12-31

Applicant: Beijing University of Technology

Inventor： Yijian Jiang ,  Yunfeng Ma ,  Yue Wang ,  Xiaoping Mei ,  Chunping Zhang ,  Qiang Wang ,  Yangli Xu

IPC: C30B19/02 ,  C30B13/02 ,  C30B13/00 ,  C30B29/16 ,  C30B13/22 ,  C30B13/34 ,  C30B29/22

CPC classification number: C30B13/02 ,  C04B35/453 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3409 ,  C04B2235/6567 ,  C04B2235/94 ,  C30B13/00 ,  C30B13/22 ,  C30B13/24 ,  C30B13/34 ,  C30B19/02 ,  C30B29/16 ,  C30B29/22

Abstract: The disclosure provides a method for growing GZO (ZnO:Ga) single crystals and relates to the technical field of crystal growth. The method may include the following steps: firstly, preparing compact, uniform and single-phase polycrystalline rods; secondly, optimizing the components and the proportions of flux; finally, optimizing the process parameters of travelling solvent floating zone crystal growth method for GZO, such as growth power, growth rate and rotation speed, etc. GZO crystals grown by this disclosure are high in crystalline quality, consistent in growth direction and excellent in electrical properties.

Abstract translation: 本发明提供了生长GZO（ZnO：Ga）单晶的方法，涉及晶体生长的技术领域。 该方法可以包括以下步骤：首先制备紧凑，均匀和单相多晶棒; 其次，优化部件和焊剂的比例; 最终优化生长功率，生长速度和转速等GZO行走溶剂漂浮晶体生长方法的工艺参数。本发明生长的GZO晶体结晶质量高，生长方向一致，电气优良 属性。

公开(公告)号：US07357963B2

公开(公告)日：2008-04-15

申请号：US10025907

申请日：2001-12-26

Applicant: Yun-Ho Jung

Inventor： Yun-Ho Jung

IPC: B05D3/06 ,  C30B1/08 ,  C30B21/04 ,  C30B13/22

CPC classification number: H01L21/0268 ,  B23K26/066 ,  B23K26/0853 ,  H01L21/2026

Abstract: A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of slits through which the laser beam passes. An objective lens for scaling down the laser beam is arranged between the mask and the X-Y stage. A mask stage is connected to the mask for controlling minute movement of the mask for crystallizing amorphous silicon in one block.

公开(公告)号：US06966946B2

公开(公告)日：2005-11-22

申请号：US10494357

申请日：2002-10-11

Applicant: Yoshio Kaneko ,  Yoshinori Tokura ,  Shigeki Miyasaka

Inventor： Yoshio Kaneko ,  Yoshinori Tokura ,  Shigeki Miyasaka

IPC: C30B29/22 ,  C30B13/00 ,  C30B13/22 ,  H01L41/20 ,  C30B15/20

CPC classification number: C30B29/22 ,  C30B13/22

Abstract: A manufacturing method of a Ga2-xFexO3 crystal is provided which can form a superior, uniform, and large crystal.By a floating zone melting method in which ends of material bars (3, 5), which are disposed at an upper and a lower position and which are composed of Ga2-xFexO3, are heated in a gas atmosphere with halogen lamps (6, 7) disposed at confocal areas so as to form a floating melting zone between the ends of the material bars (3, 5) which are disposed at the upper and the lower position and which are composed of Ga2-xFexO3, Ga2-xFexO3 a single crystal having an orthorhombic crystal structure is formed.

Abstract translation: 提供了可以形成优良均匀的大晶体的Ga 2-x Fe 3 O 3 O 3晶体的制造方法。 通过浮置区熔化方法，其中设置在上下位置并且由Ga 2-x Fe x x组成的材料棒（3,5）的端部， 在气氛中用配置在共焦区域上的卤素灯（6,7）加热，以便在材料棒（3,5）的端部之间形成浮动熔融区 ），其设置在上部和下部位置，并且由Ga 2-x Fe 3 O 3 N 3，Ga 形成具有正交晶体结构的单晶的2-x Fe x O 3 3。

公开(公告)号：US20050079736A1

公开(公告)日：2005-04-14

申请号：US10961266

申请日：2004-10-12

Applicant: Ji-Yong Park ,  Hye-Hyang Park

Inventor： Ji-Yong Park ,  Hye-Hyang Park

IPC: G02F1/136 ,  C30B13/22 ,  C30B29/06 ,  C30B29/60 ,  H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00 ,  H01L21/477 ,  C30B1/00

CPC classification number: H01L21/02678 ,  C30B13/22 ,  C30B29/06 ,  C30B29/605 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/78672

Abstract: The present invention relates to a fabrication method for polycrystalline silicon thin that is capable of providing uniform crystallization of polycrystalline silicon thin film by laser using a mask having a mixed structure of laser transmission regions and laser non-transmission regions, wherein the laser transmission regions exist asymmetrically on the basis of a laser scanning directional axis, and the laser transmission regions exist symmetrically on the basis of a certain central axis, and the laser transmission regions are shifted to a certain distance on the basis of another axis parallel to the certain central axis, so that the laser transmission regions and non laser transmission regions are alternately positioned.

Abstract translation: 本发明涉及一种多晶硅薄膜的制造方法，其能够通过使用具有激光透射区域和激光非透射区域的混合结构的掩模的激光来提供多晶硅薄膜的均匀结晶，其中存在激光透射区域 基于激光扫描方向轴不对称，并且激光透射区域基于某个中心轴对称地存在，并且激光透射区域基于平行于某个中心轴线的另一个轴线移动到一定距离 使得激光透射区域和非激光透射区域交替地定位。

公开(公告)号：US6039802A

公开(公告)日：2000-03-21

申请号：US35472

申请日：1998-03-05

Applicant: Takenori Sekijima ,  Takashi Fujii ,  Kikuo Wakino ,  Masakatsu Okada

Inventor： Takenori Sekijima ,  Takashi Fujii ,  Kikuo Wakino ,  Masakatsu Okada

IPC: C30B13/00 ,  C30B13/22 ,  C30B13/24 ,  C30B29/28 ,  H01F1/34 ,  C30B13/02

CPC classification number: C30B29/225 ,  C30B13/00 ,  C30B13/22 ,  C30B29/28 ,  C30B29/60

Abstract: There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and seed crystal within a heating furnace; joining the polycrystal with the seed crystal; heating the polycrystal on the side opposite from the side where the polycrystal is joined with the seed crystal to form a melt zone; moving the melt zone to the side where the polycrystal is joined with the seed crystal so that the melt zone is in contact with the seed crystal to allow seeding; and growing single crystal by moving the melt zone which has been in contact with the seed crystal and been seeded to the opposite side from the side where the polycrystal is joined with the seed crystal.

Abstract translation: 提供了一种单晶生长方法，其允许不相融的熔融化合物的单晶生长稳定，同时控制其生长方向。 单晶生长方法包括以下步骤：在加热炉内保持多晶和晶种; 用晶种连接多晶; 在多晶与晶种接合的一侧相反的一侧加热多晶体以形成熔融区; 将熔融区移动到多晶与晶种接合的一侧，使得熔融区与晶种接触以允许接种; 并且通过移动与晶种接触的熔融区并且接种到多晶与晶种接合的一侧的相对侧，生长单晶。

公开(公告)号：US5427051A

公开(公告)日：1995-06-27

申请号：US64386

申请日：1993-05-21

Applicant: Randolph E. Maxwell ,  Curtis E. Scott ,  Mary S. Kaliszewski ,  Marshall G. Jones ,  Lionel M. Levinson ,  Carl E. Erikson

Inventor： Randolph E. Maxwell ,  Curtis E. Scott ,  Mary S. Kaliszewski ,  Marshall G. Jones ,  Lionel M. Levinson ,  Carl E. Erikson

IPC: C30B1/02 ,  C30B1/00 ,  C30B1/08 ,  C30B13/00 ,  C30B13/06 ,  C30B28/02 ,  C30B29/20 ,  C30B13/22

CPC classification number: C30B13/06 ,  C30B1/00 ,  C30B1/08 ,  C30B13/00 ,  C30B29/20 ,  Y10S117/904

Abstract: Polycrystalline alumina bodies have been converted to sapphire by a solid state conversion process in which a localized energy source is used to heat only a portion of the body to a temperature above 1800.degree. C. Using a laser as the energy source resulted in conversion to sapphire in less than an hour. The polycrystalline alumina bodies had a magnesia content below 50 wppm, an average grain size below 100 microns, and a density greater than 3.97 g/cc.

Abstract translation: 多晶氧化铝体已经通过固态转化过程转化为蓝宝石，其中局部能量源仅用于将身体的一部分加热至高于1800℃的温度。使用激光作为能量源导致转化为蓝宝石 在不到一个小时内。 多晶氧化铝体的氧化镁含量低于50wppm，平均粒度小于100微米，密度大于3.97g / cc。

公开(公告)号：US4749438A

公开(公告)日：1988-06-07

申请号：US816424

申请日：1986-01-06

Applicant: Carl E. Bleil

Inventor： Carl E. Bleil

IPC: C30B13/00 ,  C30B13/22 ,  C30B11/08 ,  C30B11/14

CPC classification number: C30B13/22 ,  C30B13/00 ,  C30B29/60 ,  Y10T117/108 ,  Y10T117/1088

Abstract: A method and apparatus for producing crystalline ribbons by zone melting. Means for coupling electromagnetic energy into a film of material are provided to appropriately induce electrical currents in order to control and restrict the molten zone and suppress net loss of the heat of fusion from the balance of the ribbon in contact with the melt, thus controlling the thickness uniformity of the resulting ribbon. The heat of crystallization is selectively removed by a heat absorbing means from one end of the melt zone in a direction substantially perpendicular to the direction of pulling.

Abstract translation: 通过区域熔融生产结晶带的方法和装置。 提供用于将电磁能耦合到材料膜中的装置以适当地感应电流，以便控制和限制熔融区域，并且抑制熔融热从与熔体接触的色带的平衡中的净损失，从而控制 所得色带的厚度均匀性。 结晶的热量通过吸热装置从基本上垂直于拉伸方向的方向从熔融区的一端选择性地去除。

公开(公告)号：US4737233A

公开(公告)日：1988-04-12

申请号：US901975

申请日：1986-09-02

Applicant: Avid Kamgar ,  Ernest Labate ,  Joseph R. Ligenza ,  Simon M. Sze

Inventor： Avid Kamgar ,  Ernest Labate ,  Joseph R. Ligenza ,  Simon M. Sze

IPC: C30B13/22 ,  C30B13/24

CPC classification number: C30B13/24 ,  C30B13/22

Abstract: Semiconductor crystal films on a dielectric substrate are advantageously made by a zone melting method. Single-crystal structure is initiated at a seed surface, and made to extend across a dielectric surface by melting and resolidifying.Melting is effected upon irradiation with optical radiation which is focused onto an elongated zone; the zone is moved so as to locally melt successive portions of a layer of precursor material which may be amorphous or polycrystalline. The use of incoherent radiation is convenient, and focusing is typically by using a reflector.The process is conveniently effected under a controlled atmosphere and the layer being crystallized may be encapsulated so that no free semiconductor surface is exposed to an atmosphere.

Abstract translation: 电介质基板上的半导体晶体膜有利地通过区域熔融法制成。 单晶结构在种子表面开始，并通过熔化和重新固化而延伸穿过电介质表面。 熔融是在被聚焦在细长区上的光辐射照射时进行的; 移动该区域以便局部熔化可能是无定形或多晶的前体材料层的连续部分。 使用非相干辐射是方便的，并且聚焦通常是通过使用反射器。 该方法方便地在可控气氛下进行，并且被结晶的层可以被包封，使得没有游离半导体表面暴露于大气中。

公开(公告)号：US4196041A

公开(公告)日：1980-04-01

申请号：US785485

申请日：1977-04-07

Applicant: Aslan Baghdadi ,  Richard W. Gurtler

Inventor： Aslan Baghdadi ,  Richard W. Gurtler

IPC: C30B13/00 ,  C30B13/22 ,  C30B13/34 ,  B01J17/08 ,  B01J17/20 ,  C01B33/02

CPC classification number: C30B13/34 ,  C30B13/00 ,  C30B13/22 ,  C30B29/60 ,  Y10S117/904

Abstract: A polycrystalline semiconductor sheet may be converted to a monocrystalline or macrocrystalline semiconductor sheet through use of a geometric restriction in the sheet. The process requires formation of a region of the sheet having a small width compared to the width of the remainder of the sheet. A molten zone is formed in the small width region of the sheet. At least a portion of the molten zone is allowed to solidify into a single crystal or crystals of large size of the semiconductor material coextensive with the small width of the region at the portion of the molten zone so solidified. The molten zone is then moved from the small width region of the sheet into the remainder of the sheet. The sheet is allowed to solidify successively as the molten zone passes along it. As a result, the macrocrystal formed in the narrow width region of the sheet propagates into the remainder of the sheet through which the molten zone passes. This process allows formation of high modified semiconductor material without requiring use of a seed crystal.

Abstract translation: 多晶半导体片可以通过使用片材中的几何限制而转变为单晶或微晶半导体片。 该方法需要与片材的其余部分的宽度相比形成具有小宽度的片材区域。 在片的小宽度区域形成熔融区。 允许熔融区的至少一部分固化成单晶或大尺寸的半导体材料的晶体，与熔融区部分的该区域的小宽度共同延伸，从而固化。 然后将熔融区域从片材的小宽度区域移动到片材的其余部分。 当熔融区沿着该片通过时，片材可以连续固化。 结果，形成在片材的窄宽度区域中的宏晶体传播到熔融区域通过的片材的剩余部分中。 该方法允许形成高度改性的半导体材料，而不需要使用晶种。