Invention Grant
- Patent Title: Method for fabricating via connectors through semiconductor wafers
- Patent Title (中): 通过半导体晶片制造通孔连接器的方法
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Application No.: US473551Application Date: 1983-03-09
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Publication No.: US4445978APublication Date: 1984-05-01
- Inventor: James C. Whartenby , Richard Brown , Srinivas T. Rao , Raymond J. Menna
- Applicant: James C. Whartenby , Richard Brown , Srinivas T. Rao , Raymond J. Menna
- Applicant Address: NY New York
- Assignee: RCA Corporation
- Current Assignee: RCA Corporation
- Current Assignee Address: NY New York
- Main IPC: C25D5/02
- IPC: C25D5/02 ; H01L21/768 ; H05K3/42 ; C25D7/04
Abstract:
A method is provided for fabricating a via connector from a first surface of a semiconductor wafer to an opposite second surface of the wafer. The first step consists of forming an adherent metal layer on the first surface on the semiconductor wafer. If the first surface of the semiconductor wafer has electronic components formed thereon, the metal layer is applied over the electronic components and preferably a protective layer of material is formed over the metal layer. Via holes are then laser drilled at predetermined locations through the metal layer and then through the semiconductor wafer. Thereafter a photoresist layer is applied over the first surface and exposed and developed to provide passage holes in the photoresist which are in alignment with the laser drilled apertures. The metal layer is then connected in the cathode position of the electroforming apparatus and via connectors are thereafter electroformed in the via holes.
Public/Granted literature
- US5081145A Indole-2-alkanoic acids compositions of and anti allergic use thereof Public/Granted day:1992-01-14
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