公开(公告)号：US07687291B2

公开(公告)日：2010-03-30

申请号：US11277602

申请日：2006-03-27

Applicant: Greg Charache ,  John Hostetler ,  Ching-Long Jiang ,  Raymond J. Menna ,  Radosveta Radionova ,  Robert W. Roff ,  Holger Schlüter

Inventor： Greg Charache ,  John Hostetler ,  Ching-Long Jiang ,  Raymond J. Menna ,  Radosveta Radionova ,  Robert W. Roff ,  Holger Schlüter

IPC: H01L21/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/1064 ,  H01S5/16 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/4031

Abstract: Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.

Abstract translation: 制备二极管激光器的前面和后面的方法包括控制第一室内的气氛，使得氧含量和水蒸气含量被控制在预定水平内，并将二极管激光器从受控气氛中的晶片 第一室以形成在二极管激光器的正面和背面上憎恨预定厚度的自然氧化物层。 在切割之后，二极管激光器在受控气氛中从第一室输送到第二室，部分去除二极管激光器的前面和后面上的自然氧化物层，在正面和背面形成无定形表面层 二极管激光器的小面以及二极管激光器的前面和后面被钝化。

公开(公告)号：US4394629A

公开(公告)日：1983-07-19

申请号：US249609

申请日：1981-03-31

Applicant: Mahesh Kumar ,  Raymond J. Menna ,  Ho-Chung Huang

Inventor： Mahesh Kumar ,  Raymond J. Menna ,  Ho-Chung Huang

IPC: H01P5/18

CPC classification number: H01P5/186

Abstract: A 0.degree. and 180.degree. hybrid power divider/combiner includes a first quadrature hybrid and two other quadrature hybrids arranged in tandem with one output port of the first hybrid connected to an input port of the tandem arrangement and the other output port thereof connected to a delay of electrical length equal to that of the tandem arrangement. When an input signal is applied to one input port of the first hybrid with the other port terminated, two signals of reduced amplitude which are either in phase or of opposed phase (dependent on which input port receives the input signal) are produced at the output of the tandem arrangement and delay.

Abstract translation: 0°和180°混合功率分配器/组合器包括第一正交混合器和两个其他正交混合器，其与第一混合器的一个输出端口串联布置，连接到串联装置的输入端口，并且另一个输出端口连接到 电长度的延迟等于串联布置的电长度。 当输入信号被施加到另一端口端接的第一混合信号的一个输入端口时，在输出端产生两个同相或相对相位（取决于哪个输入端口接收输入信号）的幅度减小的两个信号 的串联安排和延迟。

公开(公告)号：US06639930B2

公开(公告)日：2003-10-28

申请号：US10043548

申请日：2002-01-11

Applicant: Giora Griffel ,  Raymond J. Menna ,  Joseph H. Abeles ,  John C. Connolly

Inventor： Giora Griffel ,  Raymond J. Menna ,  Joseph H. Abeles ,  John C. Connolly

IPC: H01S3083

CPC classification number: H01S5/1071 ,  H01S5/1032 ,  H01S5/2081 ,  H01S5/22

Abstract: A closed-loop ring resonator including a closed loop formed on a substrate and including at least one coupling region having a first effective depth and at least one other region having a second effective depth, wherein the first and second depths are different.

公开(公告)号：US06034380A

公开(公告)日：2000-03-07

申请号：US946180

申请日：1997-10-07

Applicant: Gerard Argant Alphonse ,  James T. Andrews ,  Raymond J. Menna

Inventor： Gerard Argant Alphonse ,  James T. Andrews ,  Raymond J. Menna

IPC: H05B33/00 ,  H01L33/00 ,  H01S5/20 ,  H01S5/32 ,  H05B33/12 ,  H05B33/22 ,  H05B33/24

CPC classification number: H01L33/0045 ,  H01S5/20 ,  H01S2301/18 ,  H01S5/2004 ,  H01S5/3211

Abstract: A semiconductor electro luminescent diode having a body of a semiconductor material with the body having a pair of spaced opposed end surfaces, side surfaces and top and bottom surfaces. The body includes therein an active layer which extends from one end surface to a point spaced from the other end surface. The active layer is of a width narrower than the distance between the side surfaces. Also, the active layer has a portion adjacent the other end surface of the body which is tapered to come to a point. First clad layers of a material having an index of refraction smaller than that of the active layer are at opposite sides of the active layer and extend between the end of the active layer and the other end surface of the body. Second clad layers of a material having an index of refraction larger than that of the first clad layers but less than the index of refraction of the active layer are on the first clad layer. Radiation generated in the active layer and emitted from the pointed end of the active layer extends in area in the portion of the second clad layer between the pointed end of the active layer and the other end of the body so that the area of the beam of radiation emitted from the -diode is larger than the area of the beam formed in the active layer.

Abstract translation: 一种具有半导体材料本体的半导体电致发光二极管，其主体具有一对间隔开的相对端面，侧表面和顶表面和底表面。 主体包括从一个端面延伸到与另一端面间隔开的点的有源层。 活性层的宽度比侧表面之间的距离窄。 此外，活性层具有与本体的另一端面相邻的部分，该部分是锥形的以达到一点。 折射率小于有源层的材料的第一包层位于有源层的相对侧，并且在有源层的端部和主体的另一个端面之间延伸。 具有折射率大于第一包层的折射率但小于活性层的折射率的材料的第二包层位于第一包层上。 在有源层中产生的并且从有源层的尖端发射的辐射在第二覆盖层的部分中在有源层的尖端和主体的另一端之间的区域中延伸，使得 从二极管发射的辐射大于在有源层中形成的光束的面积。

公开(公告)号：US4445978A

公开(公告)日：1984-05-01

申请号：US473551

申请日：1983-03-09

Applicant: James C. Whartenby ,  Richard Brown ,  Srinivas T. Rao ,  Raymond J. Menna

Inventor： James C. Whartenby ,  Richard Brown ,  Srinivas T. Rao ,  Raymond J. Menna

IPC: C25D5/02 ,  H01L21/768 ,  H05K3/42 ,  C25D7/04

CPC classification number: C25D5/02 ,  H01L21/76898 ,  H05K3/423

Abstract: A method is provided for fabricating a via connector from a first surface of a semiconductor wafer to an opposite second surface of the wafer. The first step consists of forming an adherent metal layer on the first surface on the semiconductor wafer. If the first surface of the semiconductor wafer has electronic components formed thereon, the metal layer is applied over the electronic components and preferably a protective layer of material is formed over the metal layer. Via holes are then laser drilled at predetermined locations through the metal layer and then through the semiconductor wafer. Thereafter a photoresist layer is applied over the first surface and exposed and developed to provide passage holes in the photoresist which are in alignment with the laser drilled apertures. The metal layer is then connected in the cathode position of the electroforming apparatus and via connectors are thereafter electroformed in the via holes.

Abstract translation: 提供一种用于从半导体晶片的第一表面到晶片的相对的第二表面制造通孔连接器的方法。 第一步包括在半导体晶片的第一表面上形成粘附金属层。 如果半导体晶片的第一表面具有形成在其上的电子部件，则将金属层施加在电子部件上，并且优选在金属层上形成材料保护层。 然后在预定位置通过金属层激光钻孔，然后穿过半导体晶片。 此后，将光致抗蚀剂层施加在第一表面上并暴露并显影以在光致抗蚀剂中提供与激光钻孔相对准的通孔。 然后将金属层连接在电铸装置的阴极位置，然后通孔连接器在通孔中电铸。

公开(公告)号：US07084444B2

公开(公告)日：2006-08-01

申请号：US10471794

申请日：2001-03-19

Applicant: Dmitri Zalmanovich Garbuzov ,  Raymond J. Menna

Inventor： Dmitri Zalmanovich Garbuzov ,  Raymond J. Menna

IPC: H01L29/861

CPC classification number: B82Y20/00 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34306

Abstract: A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see FIG. 4B. In accordance with the principles of the invention, at least one blocking layer (70) is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (66). In one aspect of the invention, a blocking layer (70) is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region (64) is positioned adjacent to the blocking layer (70) to decrease optical losses.

Abstract translation: 公开了一种用于提高诸如半导体激光器，超发光发光二极管（SLD），增益芯片，光放大器之类的光电子器件的效率的方法。 根据本发明的原理，至少一个阻挡层（70）插入在构成该装置的材料之间的界面处。 至少一个阻挡层产生防止电子从包含在波导区域中的器件有源区域泄漏到器件覆盖区域（66）的势垒。 在本发明的一个方面，在具有不同导电性的半导体材料的接合处形成阻挡层（70）。 阻挡层防止电子进入不同极性的材料。 在本发明的另一方面，低掺杂或未掺杂区域（64）定位成与阻挡层（70）相邻以减小光学损耗。