发明授权
US4454431A Semiconductor circuit with a circuit part controlled by a substrate bias
失效
具有由衬底偏置控制的电路部分的半导体电路
- 专利标题: Semiconductor circuit with a circuit part controlled by a substrate bias
- 专利标题(中): 具有由衬底偏置控制的电路部分的半导体电路
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申请号: US240197申请日: 1981-03-03
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公开(公告)号: US4454431A公开(公告)日: 1984-06-12
- 发明人: Kurt Hoffmann , Dieter Kantz
- 申请人: Kurt Hoffmann , Dieter Kantz
- 申请人地址: DEX Berlin and Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DEX Berlin and Munich
- 优先权: DEX3009303 19800311
- 主分类号: G11C11/407
- IPC分类号: G11C11/407 ; G05F3/20 ; G11C11/34 ; H01L21/822 ; H01L27/04 ; H01L27/10 ; H03K17/22 ; H03K17/06 ; H03K17/10
摘要:
A semiconductor circuit assembly having capacitively controlled field effect transistors, includes a semiconductor chip containing a digital circuit part for supplying timing pulses for controlling operation of the digital circuit part, and terminal having at least one conductive connection to the digital circuit part and the timing pulse generator for supplying potentials thereto from a direct current source. An oscillator is provided and a substrate-bias generator connected to the oscillator and the timing pulse generator. The substrate-bias generator is controlled by the oscillator for producing a bias voltage able to reach a given full value and for activating the timing pulse generator only after the substrate bias voltage has reached its full value.
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