发明授权
- 专利标题： Process for forming thin film
- 专利标题（中）： 薄膜成膜工艺
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申请号： US534686申请日： 1983-09-22
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公开(公告)号： US4495218A公开(公告)日： 1985-01-22
- 发明人: Kazufumi Azuma , Mitsuo Nakatani , Kazuo Nate , Masaaki Okunaka , Hitoshi Yokono
- 申请人： Kazufumi Azuma , Mitsuo Nakatani , Kazuo Nate , Masaaki Okunaka , Hitoshi Yokono
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX57-168463 19820929
- 主分类号： C23C16/48
- IPC分类号： C23C16/48 ; C23C16/24 ; C23C16/34 ; C23C16/40 ; H01L21/205 ; H01L21/268 ; H01L21/31 ; H01L21/314 ; H01L21/316 ; H01L21/318 ; H01L31/04 ; C23C17/00
摘要：
A thin film of a-Si, SiO.sub.2 or Si.sub.3 N.sub.4 can be formed on a substrate using a starting material gas containing at least a polysilane of the formula Si.sub.n H.sub.2n+2 (n=2, 3 or 4) by a chemical vapor deposition method with irradiation with light with high film forming rate at lower temperatures.
公开/授权文献
- US5688075A Boom system 公开/授权日：1997-11-18