发明授权
- 专利标题： Trench isolated transistors in semiconductor films
- 专利标题（中）： 沟槽隔离晶体管在半导体薄膜
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申请号： US522767申请日： 1983-08-12
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公开(公告)号： US4507158A公开(公告)日： 1985-03-26
- 发明人: Theodore I. Kamins , Donald R. Bradbury , Clifford I. Drowley
- 申请人： Theodore I. Kamins , Donald R. Bradbury , Clifford I. Drowley
- 申请人地址： CA Palo Alto
- 专利权人： Hewlett-Packard Co.
- 当前专利权人： Hewlett-Packard Co.
- 当前专利权人地址： CA Palo Alto
- 主分类号： H01L27/08
- IPC分类号： H01L27/08 ; H01L21/20 ; H01L21/205 ; H01L21/76 ; H01L21/762 ; H01L21/763 ; H01L29/78 ; H01L29/786 ; H01L21/95
摘要：
A method for trench isolation of a silicon island for device fabrication using only conventional very large scale integration (VLSI) techniques is provided. The combination of the sidewall isolation achieved with the trench isolation and the underlying oxide film create a totally dielectrically isolated structure without the possibility of latch-up between adjacent devices.
公开/授权文献
- US4017368A Process for electroplating zirconium alloys 公开/授权日：1977-04-12
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