发明授权
- 专利标题: Semiconductor imaging device using charge-coupling device
- 专利标题(中): 半导体成像装置采用电荷耦合器件
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申请号: US338362申请日: 1982-01-11
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公开(公告)号: US4521797A公开(公告)日: 1985-06-04
- 发明人: Eiji Oda
- 申请人: Eiji Oda
- 申请人地址: JPX Tokyo
- 专利权人: Nippon Electric Co., Ltd.
- 当前专利权人: Nippon Electric Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX53-22668 19780227
- 主分类号: H01L27/148
- IPC分类号: H01L27/148 ; H04N5/335 ; H04N5/341 ; H04N5/351 ; H04N5/357 ; H04N5/372 ; H01L29/78 ; G11C19/28
摘要:
A two-dimensional, imaging device has a semiconductor substrate of one conductivity type, an orthogonal array of photosensitive regions of opposite conductivity type, charge transfer gates and charge transfer channels separating columns of the orthogonal array. A gate pulse generator applies a gate pulse to the charge transfer gates. A clock pulse generator applies a two phase clock to the charge transfer channels. The charge transfer channels include electrode pairs, each of which is formed by a charge storage electrode and a potential barrier electrode which are arranged so that a charge storage electrode of one pair is connected to a potential barrier electrode of an adjacent pair, to receive the same clock pulse.
公开/授权文献
- US6095107A Method of producing a slide surface on a light metal alloy 公开/授权日:2000-08-01
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