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US4521797A Semiconductor imaging device using charge-coupling device 失效
半导体成像装置采用电荷耦合器件

Semiconductor imaging device using charge-coupling device
摘要:
A two-dimensional, imaging device has a semiconductor substrate of one conductivity type, an orthogonal array of photosensitive regions of opposite conductivity type, charge transfer gates and charge transfer channels separating columns of the orthogonal array. A gate pulse generator applies a gate pulse to the charge transfer gates. A clock pulse generator applies a two phase clock to the charge transfer channels. The charge transfer channels include electrode pairs, each of which is formed by a charge storage electrode and a potential barrier electrode which are arranged so that a charge storage electrode of one pair is connected to a potential barrier electrode of an adjacent pair, to receive the same clock pulse.
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