公开(公告)号：US4805026A

公开(公告)日：1989-02-14

申请号：US14993

申请日：1987-02-17

申请人： Eiji Oda

发明人： Eiji Oda

IPC分类号： H01L27/148 ,  H04N5/343 ,  H04N5/3728 ,  H04N3/14

CPC分类号： H04N3/1537 ,  H01L27/14831

摘要： The invention provides a method for driving a CCD area image sensor. An interline transfer type CCD area image sensor includes a plurality of photo sensors arranged in a plurality of lines. A plurality of vertical shift registers are disposed along one of the lines of photo sensors. A horizontal shift register is formed to receive charges from the vertical shift registers. An output circuit converts the charges transferred through the horizontal shift resistor into electrical signals. The driving method includes the steps of accumulating charges in the photo sensors, transferring charges accumulated in all of the photo sensors to the vertical shift registers, and shifting the transferred charges to the horizontal shift register via the vertical shift registers. The start of charge-shiftings is initiated from the charges in the order of the distances between the transferred position and the photo sensors and the horizontal shift register. The charges received from the vertical shift registers are shifted through the horizontal shift register to an output circuit where the quality of charges reaching the output is converted into an electrical signal. The CCD area image sensor includes at least one shift register circuit for producing shift pulses which perform the above-mentioned operations.

摘要翻译： 本发明提供一种驱动CCD区域图像传感器的方法。 行间传送型CCD区域图像传感器包括以多行布置的多个光传感器。 沿着光传感器的一条线设置多个垂直移位寄存器。 形成水平移位寄存器以从垂直移位寄存器接收电荷。 输出电路将通过水平移位电阻传送的电荷转换为电信号。 驱动方法包括以下步骤：在光传感器中累积电荷，将累积在所有光传感器中的电荷转移到垂直移位寄存器，以及经由垂直移位寄存器将传送的电荷移位到水平移位寄存器。 充电移位的开始是从传送位置与光传感器和水平移位寄存器之间的距离的顺序从电荷开始的。 从垂直移位寄存器接收的电荷通过水平移位寄存器移动到输出电路，其中到达输出的电荷的质量被转换为电信号。 CCD区域图像传感器包括至少一个用于产生执行上述操作的移位脉冲的移位寄存器电路。

公开(公告)号：US4521797A

公开(公告)日：1985-06-04

申请号：US338362

申请日：1982-01-11

申请人： Eiji Oda

发明人： Eiji Oda

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/351 ,  H04N5/357 ,  H04N5/372 ,  H01L29/78 ,  G11C19/28

CPC分类号： H01L27/14831

摘要： A two-dimensional, imaging device has a semiconductor substrate of one conductivity type, an orthogonal array of photosensitive regions of opposite conductivity type, charge transfer gates and charge transfer channels separating columns of the orthogonal array. A gate pulse generator applies a gate pulse to the charge transfer gates. A clock pulse generator applies a two phase clock to the charge transfer channels. The charge transfer channels include electrode pairs, each of which is formed by a charge storage electrode and a potential barrier electrode which are arranged so that a charge storage electrode of one pair is connected to a potential barrier electrode of an adjacent pair, to receive the same clock pulse.

摘要翻译： 二维成像装置具有一种导电类型的半导体衬底，相反导电类型的感光区域的正交阵列，电荷转移栅极和分离正交阵列的电荷传输通道。 门脉冲发生器将栅极脉冲施加到电荷转移门。 时钟脉冲发生器将两相时钟施加到电荷传输通道。 电荷传输通道包括电极对，每个电极对由电荷存储电极和势垒电极形成，电荷存储电极和势垒电极被布置为使得一对电荷存储电极连接到相邻对的势垒电极，以接收 相同的时钟脉冲。

公开(公告)号：US4601098A

公开(公告)日：1986-07-22

申请号：US671745

申请日：1984-11-15

申请人： Eiji Oda

发明人： Eiji Oda

IPC分类号： H01L29/78 ,  H01L21/76 ,  H01L21/762 ,  H01L29/06 ,  H01L29/10 ,  H01L21/20 ,  H01L21/26

CPC分类号： H01L29/0638 ,  H01L21/76216 ,  H01L29/1062

摘要： A semiconductor device has an active region formed on a semiconductor substrate. The opposite sides of the active region are defined by channel stoppers. The semiconductor device is made by a manufacturing process which prevents the active region from narrowing responsive a spreading of the channel stopper into the active region. This method comprises the steps of forming a first oxide layer by oxidizing a surface of the semiconductor substrate; forming a nitride layer over the first oxide layer; forming a second oxide layer having a predetermined thickness over a predetermined portion of the first layer where the active region is to be formed, the second layer being formed by removing the nitride layer over the predetermined portion and then oxidizing; removing the nitride layer; implanting an impurity for forming the channel stoppers by using the second oxide layer as a mask; removing the second oxide layer; forming a gate oxide layer by oxidizing over the active region; and forming an electrode over the gate oxide layer.

摘要翻译： 半导体器件具有形成在半导体衬底上的有源区。 活动区域的相对侧由通道挡块限定。 半导体器件通过制造工艺制成，该制造过程防止有源区域变窄，响应于沟道阻挡层扩展到有源区域。 该方法包括通过氧化半导体衬底的表面形成第一氧化物层的步骤; 在所述第一氧化物层上形成氮化物层; 在要形成有源区的第一层的预定部分上形成具有预定厚度的第二氧化物层，通过在预定部分上除去氮化物层然后氧化形成第二层; 去除氮化物层; 通过使用第二氧化物层作为掩模来注入用于形成通道阻挡件的杂质; 去除所述第二氧化物层; 通过在有源区上氧化形成栅氧化层; 以及在所述栅极氧化物层上形成电极。

公开(公告)号：US4527182A

公开(公告)日：1985-07-02

申请号：US304301

申请日：1981-09-21

申请人： Yasuo Ishihara ,  Eiji Oda ,  Nobukazu Teranishi

发明人： Yasuo Ishihara ,  Eiji Oda ,  Nobukazu Teranishi

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L29/78

CPC分类号： H01L27/14654 ,  H01L27/14887

摘要： A semiconductor imager comprises a first and a second region (41, 42) which have a conductivity type opposite to a substrate (21) and are reverse biassed relative to the substrate beneath photosensitive regions (22) of each row and a reading device (26, 33) for the row, respectively, to be completely and not to be completely depleted, respectively. The imager may or may not comprise such a covering region (77) on each photosensitive region as may have the conductivity type of the first and the second regions and be not completely depleted. It is possible to provide a line sensor or a photodiode of a similar structure. Preferably, the first and the second regions have a common impurity concentration lower than the photosensitive regions and are respectively thinner and thicker relative to each other. The covering region preferably has the impurity concentration of each channel stopper (23).

摘要翻译： 半导体成像器包括第一和第二区域（41,42），其具有与基板（21）相反的导电类型，并且相对于每行的光敏区域（22）下方的基板被反向偏压，并且读取装置（26 ，33）分别完全不完全耗尽。 成像器可以或可以不在每个光敏区域上包括这样的覆盖区域（77），如可以具有第一和第二区域的导电类型，并且不能完全耗尽。 可以提供类似结构的线传感器或光电二极管。 优选地，第一和第二区域具有低于感光区域的共同杂质浓度，并且彼此分别更薄和更厚。 覆盖区域优选具有各通道塞子（23）的杂质浓度。

公开(公告)号：US4694476A

公开(公告)日：1987-09-15

申请号：US910343

申请日：1986-09-19

申请人： Eiji Oda

发明人： Eiji Oda

IPC分类号： G11C19/28 ,  H01L21/339 ,  H01L27/14 ,  H01L27/148 ,  H01L29/76 ,  H01L29/762 ,  H01L29/768 ,  H01L29/772 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/372 ,  H01L29/78 ,  H01L31/00

CPC分类号： G11C19/282 ,  H01L29/76858

摘要： A buried channel CCD is described wherein buried CCD elements are formed on a semiconductor substrate of P-type material and formed in a semiconductor area of N-type material. Transfer electrodes are provided to which a driving pulse is applied. The driving pulse is a three-level pulse having, at different time points, first, second and third levels, during at least one part of a time period in a charge transfer period and a charge integration period, the first or second level of the three-level pulse is applied to selected transfer electrodes so that part of signal charges in the buried channel are drained through the semiconductor area into the semiconductor substrate; and in the charge transfer period, the second and third levels are alternately applied to the transfer electrodes.

摘要翻译： 描述了掩埋通道CCD，其中掩埋的CCD元件形成在P型材料的半导体衬底上并形成在N型材料的半导体区域中。 提供施加驱动脉冲的转移电极。 驱动脉冲是三电平脉冲，在电荷转移期间和电荷积分期间的时间段的至少一部分期间，在不同的时间点具有第一，第二和第三电平，第一或第二电平 将三电平脉冲施加到所选择的转移电极，使得埋入通道中的部分信号电荷通过半导体区域排入半导体衬底; 并且在电荷转移时段中，第二和第三电平交替地施加到转移电极。