发明授权
- 专利标题: Induction heated reactor system for chemical vapor deposition
- 专利标题(中): 用于化学气相沉积的感应加热反应器系统
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申请号: US698580申请日: 1985-02-06
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公开(公告)号: US4579080A公开(公告)日: 1986-04-01
- 发明人: John G. Martin , Walter C. Benzing , Robert Graham
- 申请人: John G. Martin , Walter C. Benzing , Robert Graham
- 申请人地址: CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: CA Santa Clara
- 主分类号: C23C16/458
- IPC分类号: C23C16/458 ; C23C16/46 ; C30B25/08 ; C30B25/10 ; C30B25/12 ; C23C16/00 ; H05B6/64
摘要:
A chemical vapor deposition system which includes a generally closed reaction chamber having walls formed from a dielectric material. A susceptor for carrying a plurality of semiconductor wafers is positioned within the chamber. An induction coil is positioned in the vicinity of the susceptor for carrying an alternating electric current to produce induction heating of the susceptor and thereby heating the back side of the wafers thereon. Low frequency induction heating and variations in susceptor thickness are used to produce uniformity of temperature. Boundary control arrangement between the susceptor surface and wafer surfaces are used to improve deposition uniformity. A coating is formed on wall portions of the reaction chamber facing the susceptor and wafers carried thereon for reflecting heat energy radiated from the susceptor and the wafers positioned thereon back to the susceptor and the wafers to reduce substantially the heat loss therefrom and thereby to reduce substantially the thermal gradient from front to back surfaces of the wafers.
公开/授权文献
- US5795121A Impact-driven plastic fasteners 公开/授权日:1998-08-18
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