公开(公告)号：US4579080A

公开(公告)日：1986-04-01

申请号：US698580

申请日：1985-02-06

申请人： John G. Martin ,  Walter C. Benzing ,  Robert Graham

发明人： John G. Martin ,  Walter C. Benzing ,  Robert Graham

IPC分类号： C23C16/458 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  C23C16/00 ,  H05B6/64

CPC分类号： C23C16/4411 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12

摘要： A chemical vapor deposition system which includes a generally closed reaction chamber having walls formed from a dielectric material. A susceptor for carrying a plurality of semiconductor wafers is positioned within the chamber. An induction coil is positioned in the vicinity of the susceptor for carrying an alternating electric current to produce induction heating of the susceptor and thereby heating the back side of the wafers thereon. Low frequency induction heating and variations in susceptor thickness are used to produce uniformity of temperature. Boundary control arrangement between the susceptor surface and wafer surfaces are used to improve deposition uniformity. A coating is formed on wall portions of the reaction chamber facing the susceptor and wafers carried thereon for reflecting heat energy radiated from the susceptor and the wafers positioned thereon back to the susceptor and the wafers to reduce substantially the heat loss therefrom and thereby to reduce substantially the thermal gradient from front to back surfaces of the wafers.

摘要翻译： 一种化学气相沉积系统，其包括具有由介电材料形成的壁的通常封闭的反应室。 用于承载多个半导体晶片的基座位于腔室内。 感应线圈位于基座附近，用于承载交流电流以产生感受体的感应加热，从而加热晶片的背面。 使用低频感应加热和基座厚度的变化来产生温度均匀性。 使用感受体表面和晶片表面之间的边界控制布置来改善沉积均匀性。 在反应室的面对基座的壁部分上形成涂层，并且在其上承载的晶片用于反射从基座​​辐射的热能和位于其上的晶片返回到基座和晶片，从而基本上减少其热损失，从而基本上减小 从晶片的正面到背面的热梯度。

公开(公告)号：US4047496A

公开(公告)日：1977-09-13

申请号：US607133

申请日：1975-08-25

申请人： Michael A. McNeilly ,  Walter C. Benzing

发明人： Michael A. McNeilly ,  Walter C. Benzing

IPC分类号： C30B25/10 ,  C30B25/12 ,  C23C13/08

CPC分类号： C30B25/12 ,  C30B25/105

摘要： Apparatus and process for vapor depositing epitaxial films on substrates. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be coated. The susceptor is heated while the walls of the reaction chamber remain cool to preclude deposition of epitaxial film on the walls. To insure uniform heating of the susceptor, the same may be moved relative to the radiant heat source which, in the preferred embodiment, comprises a bank of tungsten filament quartz-iodine high intensity lamps which transmit radiant heat energy against the susceptor as a non-focused generally uniform energy field.

摘要翻译： 在衬底上气相沉积外延膜的装置和工艺。 将气态反应物引入到由诸如石英的材料形成的反应室中，所述材料对于以预定的短波长传输的辐射热能是透明的而不是阻碍的。 不透明和吸收辐射热能的石墨感受器位于反应室内并支撑待涂覆的基底。 加热感受器，同时反应室的壁保持冷却，以防止在壁上沉积外延膜。 为了确保基座的均匀加热，其可以相对于辐射热源移动，在优选实施例中，辐射热源包括一排钨丝石英碘高强度灯，其将辐射热能传递到基座作为非辐射热源， 聚焦大致均匀的能量场。

公开(公告)号：US4496609A

公开(公告)日：1985-01-29

申请号：US313814

申请日：1981-10-22

申请人： Michael A. McNeilly ,  Walter C. Benzing

发明人： Michael A. McNeilly ,  Walter C. Benzing

IPC分类号： F27B17/02 ,  H05B3/00 ,  B05D3/06

CPC分类号： C30B25/12 ,  F27B17/02 ,  H05B3/0047

摘要： Process and apparatus for heating substrates to form semiconductor regions. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be processed. The susceptor and substrates are heated directly while the walls of the reaction chamber remain cool. The substrates are heated uniformly, and single crystal semiconductor wafers processed by this technique have little or no crystallographic slip. To further insure uniform heating, the susceptor may be moved relative to the radiant heat source which, in the preferred embodiment, comprises a bank of tungsten filament quartz-iodine high intensity lamps.

摘要翻译： 用于加热衬底以形成半导体区域的工艺和设备。 将气态反应物引入到由诸如石英的材料形成的反应室中，所述材料对于以预定的短波长传输的辐射热能是透明的而不是阻碍的。 不透明并吸收辐射热能的石墨感受器位于反应室内并支撑待处理的基板。 直接加热基座和基板，同时反应室的壁保持冷却。 基板被均匀地加热，并且通过该技术处理的单晶半导体晶片很少或没有结晶滑移。 为了进一步确保均匀的加热，基座可以相对于辐射热源移动，在优选实施例中，辐射热源包括一排钨丝石英碘高强度灯。

公开(公告)号：US4081313A

公开(公告)日：1978-03-28

申请号：US739293

申请日：1976-11-05

申请人： Michael A. McNeilly ,  Walter C. Benzing ,  Richard M. Locke, Jr.

发明人： Michael A. McNeilly ,  Walter C. Benzing ,  Richard M. Locke, Jr.

IPC分类号： C30B25/10 ,  H01L21/20 ,  H01L21/324

CPC分类号： C30B25/105 ,  Y10S148/006

摘要： Process and apparatus for heating substrates to form semiconductor regions. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be processed. The susceptor and substrates are heated directly while the walls of the reaction chamber remain cool. The substrates are heated uniformly, and single crystal semiconductor wafers processed by this technique have little or no crystallographic slip. To further insure uniform heating, the susceptor may be moved relative to the radiant heat source which, in the preferred embodiment, comprises a bank of tungsten filament quartz-iodine high intensity lamps.

摘要翻译： 用于加热衬底以形成半导体区域的工艺和设备。 将气态反应物引入到由诸如石英的材料形成的反应室中，所述材料对于以预定的短波长传输的辐射热能是透明的而不是阻碍的。 不透明并吸收辐射热能的石墨感受器位于反应室内并支撑待处理的基板。 直接加热基座和基板，同时反应室的壁保持冷却。 基板被均匀地加热，并且通过该技术处理的单晶半导体晶片很少或没有结晶滑移。 为了进一步确保均匀的加热，基座可以相对于辐射热源移动，在优选实施例中，辐射热源包括一排钨丝石英碘高强度灯。