发明授权
- 专利标题： Boron trifluoride system for plasma etching of silicon dioxide
- 专利标题（中）： 用于二氧化硅等离子体蚀刻的三氟化硼系统
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申请号： US731819申请日： 1985-05-09
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公开(公告)号： US4582581A公开(公告)日： 1986-04-15
- 发明人: Marie C. Flanigan , Stephen M. Bobbio , Robert F. Aycock , Ralph L. DePrenda , Kenneth M. Thrun
- 申请人： Marie C. Flanigan , Stephen M. Bobbio , Robert F. Aycock , Ralph L. DePrenda , Kenneth M. Thrun
- 申请人地址： NJ Morris Township, Morris County
- 专利权人： Allied Corporation
- 当前专利权人： Allied Corporation
- 当前专利权人地址： NJ Morris Township, Morris County
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; C03C15/00
摘要：
BF.sub.3 based mixtures for selectively etching thin layers of silicon dioxide over silicon for use in the plasma etch process for integrated circuits manufacture is disclosed.In the process, when trace amounts of formaldehyde are added to the etch system the rate on oxide inceases markedly. The effect on the silicon is not substantial. The optional addition of an inert diluent gas did not substantially change these results.
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