公开(公告)号：US4582581A

公开(公告)日：1986-04-15

申请号：US731819

申请日：1985-05-09

申请人： Marie C. Flanigan ,  Stephen M. Bobbio ,  Robert F. Aycock ,  Ralph L. DePrenda ,  Kenneth M. Thrun

发明人： Marie C. Flanigan ,  Stephen M. Bobbio ,  Robert F. Aycock ,  Ralph L. DePrenda ,  Kenneth M. Thrun

IPC分类号： H01L21/311 ,  C03C15/00

CPC分类号： H01L21/31116

摘要： BF.sub.3 based mixtures for selectively etching thin layers of silicon dioxide over silicon for use in the plasma etch process for integrated circuits manufacture is disclosed.In the process, when trace amounts of formaldehyde are added to the etch system the rate on oxide inceases markedly. The effect on the silicon is not substantial. The optional addition of an inert diluent gas did not substantially change these results.

摘要翻译： 公开了用于选择性地蚀刻硅上的二氧化硅薄层以用于集成电路制造的等离子体蚀刻工艺的基于BF 3的混合物。 在该过程中，当痕量的甲醛加入到蚀刻系统中时，氧化物的速率显着增加。 对硅的影响不大。 任选添加惰性稀释气体基本上不改变这些结果。

公开(公告)号：US4514440A

公开(公告)日：1985-04-30

申请号：US560473

申请日：1983-12-12

申请人： Bruce H. Justice ,  Robert F. Aycock

发明人： Bruce H. Justice ,  Robert F. Aycock

IPC分类号： C30B31/02 ,  H01L21/225 ,  B05D5/12 ,  B05D3/12

CPC分类号： H01L21/2255 ,  C30B31/02 ,  H01L21/2252 ,  Y10S438/92

摘要： A single step method for boron dopant diffusion implementing both deposition and drive-in diffusions in one furnace process is provided. By using a spin-on dopant in a diffusion furnace with pyrogenic steam and thermal ramping capabilities, sheet resistivities and penetrations to a precision and accuracy of 4% with one furnace step are achievable. The one step method disclosed circumvents the use of two furnace processes to achieve a typical p-type diffusion which requires a deposition in a furnace set at one temperature followed by a drive in diffusion in a furnace set at a second temperature after deglazing in a hydrofluoric acid. Also attainable by the one step process disclosed are resistivity uniformities better than those with the two furnace processes.

摘要翻译： 提供了在一个炉工艺中实现沉积和驱入扩散的硼掺杂剂扩散的单步法。 通过在具有热解蒸汽和热倾斜能力的扩散炉中使用旋涂掺杂剂，可以实现片状电阻率和穿透精度，精度为4％，具有一个炉步骤。 所公开的一步法避免了使用两个炉工艺来实现典型的p型扩散，其需要在设置在一个温度的炉中沉积，随后在设置在氢氟酸中的第一温度之后的第二温度中的炉中进行扩散驱动 酸。 通过所公开的一步工艺也可以获得比具有两个炉工艺的电阻率均匀性更好的电阻率均匀性。

公开(公告)号：US4152286A

公开(公告)日：1979-05-01

申请号：US832857

申请日：1977-09-13

申请人： Carol A. Crosson ,  Terry L. Brewer ,  Robert F. Aycock

发明人： Carol A. Crosson ,  Terry L. Brewer ,  Robert F. Aycock

IPC分类号： H01L21/22 ,  H01L7/44

CPC分类号： H01L21/2225 ,  Y10S252/95

摘要： A boron doped, silicon oxide-forming film is produced on a semiconductor wafer by coating the wafer with a solution of a silicon compound and a boron compound, in a blend of two polar organic solvents, one of which has a low boiling point, and the other has a high boiling point, between 185.degree. and 300.degree. C. During a subsequent heating step, the high boiling point solvent redissolves any crystalline precipitate that forms during spin-on, giving a more uniform film for diffusion, and consequently a damage-free wafer surface.